HIGH-PERFORMANCE BACKSIDE-ILLUMINATED HG0.78CD0.22TE-CDTE(LAMBDA-CO=10-MU-M) PLANAR DIODES

[1] BUBULAC LO, 1979, C SOLID STATE DEVICE

[2] CHU M, 1979, DIGEST INT ELECTRON

[3] HARMAN TC, 1979, J ELECTRON MATER, V8, P191, DOI 10.1007/BF02663272

[4] BACKSIDE-ILLUMINATED HGCDTE-CDTE PHOTO-DIODES [J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 50 - 52

[5] REFRACTIVE INDEX OF ZNSE, ZNTE, + CDTE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 539 - &

[6] LPE GROWTH OF HG0.60CD0.40TE FROM TE-RICH SOLUTION [J]. APPLIED PHYSICS LETTERS, 1979, 35 (06) : 457 - 458

[7] TEMPERATURE AND ALLOY COMPOSITIONAL DEPENDENCES OF ENERGY GAP OF HG1-XCDXTE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4865 - &

[8] TENNANT WE, 1980, SOC PHOTO OPTICAL IN

[9] HGCDTE-CDTE HETEROSTRUCTURE DIODES AND MOSAICS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) : 154 - 160

[10] LIQUID-PHASE GROWTH OF HGCDTE EPITAXIAL LAYERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 175 - 179

[1] BUBULAC LO, 1979, C SOLID STATE DEVICE

[2] CHU M, 1979, DIGEST INT ELECTRON

[3] HARMAN TC, 1979, J ELECTRON MATER, V8, P191, DOI 10.1007/BF02663272

[4] BACKSIDE-ILLUMINATED HGCDTE-CDTE PHOTO-DIODES [J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 50 - 52

[5] REFRACTIVE INDEX OF ZNSE, ZNTE, + CDTE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 539 - &

[6] LPE GROWTH OF HG0.60CD0.40TE FROM TE-RICH SOLUTION [J]. APPLIED PHYSICS LETTERS, 1979, 35 (06) : 457 - 458

[7] TEMPERATURE AND ALLOY COMPOSITIONAL DEPENDENCES OF ENERGY GAP OF HG1-XCDXTE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4865 - &

[8] TENNANT WE, 1980, SOC PHOTO OPTICAL IN

[9] HGCDTE-CDTE HETEROSTRUCTURE DIODES AND MOSAICS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) : 154 - 160

[10] LIQUID-PHASE GROWTH OF HGCDTE EPITAXIAL LAYERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 175 - 179