LPE GROWTH OF HG0.60CD0.40TE FROM TE-RICH SOLUTION

被引：51

作者：

SCHMIT, JL

BOWERS, JE

机构：

[1] Honeywell Corporate Technology Center, Bloomington

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 06期

关键词：

D O I：

10.1063/1.91159

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hg0.60Cd0.40Te has been grown at atmospheric pressure using a liquid phase epitaxy (LPE) slider system. The compositions are uniform to within ±0.01 mole fraction across the layer and with depth into the layer except for a 3-μm-thick interdiffusion region. The layers are p type as grown with carrier concentration of 1017 cm-3 and are annealable to n type with a carrier concentration of 4×1015 cm-3.

引用

页码：457 / 458

页数：2

共 10 条

[1] BLAKEMORE JS, 1952, ELECTRON COMMUN, V29, P131
[2] HARMAN TC, 1979, J ELECTRON MATER, V8, P191, DOI 10.1007/BF02663272
[3] BACKSIDE-ILLUMINATED HGCDTE-CDTE PHOTO-DIODES
LANIR, M
WANG, CC
VANDERWYCK, AHB
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 50 - 52
[4] MACIOLEK R, COMMUNICATION
[5] EFFECT OF ANNEALING TEMPERATURE ON CARRIER CONCENTRATION OF HG0.6CD0.4TE
SCHMIT, JL
STELZER, EL
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (01) : 65 - 81
[6] SCHWARTZ JP, 1977, THESIS MARQUETTE U, P99
[7] ELECTRON MOBILITY IN HG1-X CDX TE
SCOTT, W
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) : 1055 - +
[8] ELECTRICAL AND FAR-INFRARED OPTICAL-PROPERTIES OF P-TYPE HG-1-XCD-XTE
SCOTT, W
STELZER, EL
HAGER, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1408 - 1414
[9] SPEERSCHENIDER C, COMMUNICATION
[10] SOLID SOLUTION IN A-II B-VI TELLURIDES
WOOLLEY, JC
RAY, B
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 13 (1-2) : 151 - 153

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