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EFFECT OF ANNEALING TEMPERATURE ON CARRIER CONCENTRATION OF HG0.6CD0.4TE
被引:53
作者
:
SCHMIT, JL
论文数:
0
引用数:
0
h-index:
0
SCHMIT, JL
STELZER, EL
论文数:
0
引用数:
0
h-index:
0
STELZER, EL
机构
:
来源
:
JOURNAL OF ELECTRONIC MATERIALS
|
1978年
/ 7卷
/ 01期
关键词
:
D O I
:
10.1007/BF02656021
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:65 / 81
页数:17
相关论文
共 10 条
[1]
PARTIAL PRESSURES OF HG(G) AND TE2(G) IN HG-TE SYSTEM FROM OPTICAL DENSITIES
BREBRICK, RF
论文数:
0
引用数:
0
h-index:
0
BREBRICK, RF
STRAUSS, AJ
论文数:
0
引用数:
0
h-index:
0
STRAUSS, AJ
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1965,
26
(06)
: 989
-
&
[2]
DOPING PROPERTIES OF SELECTED IMPURITIES IN HG1-XCDXTE
JOHNSON, ES
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,RECH CTR,BLOOMINGTON,MN 55420
JOHNSON, ES
SCHMIT, JL
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,RECH CTR,BLOOMINGTON,MN 55420
SCHMIT, JL
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1977,
6
(01)
: 25
-
38
[3]
KOEHLER T, 1975, P SOC PHOTO-OPT INS, V62, P26
[4]
KOEHLER T, 1974, OPTICAL ENGINEER JUL
[5]
PHOTON EFFECTS IN HG1-XCDXTE
KRUSE, PW
论文数:
0
引用数:
0
h-index:
0
KRUSE, PW
[J].
APPLIED OPTICS,
1965,
4
(06):
: 687
-
&
[6]
LONG D, 1970, SEMICONDUCTORS SEMIM, V5, P234
[7]
NOBEL DD, 1959, PHILIPS RES REP, V14, P361
[8]
ELECTRICAL AND FAR-INFRARED OPTICAL-PROPERTIES OF P-TYPE HG-1-XCD-XTE
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引用数:
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机构:
HONEYWELL CORPORATE RES CTR,BLOOMINGTON,MN 55420
HONEYWELL CORPORATE RES CTR,BLOOMINGTON,MN 55420
SCOTT, W
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0
引用数:
0
h-index:
0
机构:
HONEYWELL CORPORATE RES CTR,BLOOMINGTON,MN 55420
HONEYWELL CORPORATE RES CTR,BLOOMINGTON,MN 55420
STELZER, EL
HAGER, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL CORPORATE RES CTR,BLOOMINGTON,MN 55420
HONEYWELL CORPORATE RES CTR,BLOOMINGTON,MN 55420
HAGER, RJ
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(04)
: 1408
-
1414
[9]
VAPOR-CRYSTAL EQUILIBRIUM AND ELECTRICAL PROPERTIES OF HGTE
STRAUSS, AJ
论文数:
0
引用数:
0
h-index:
0
STRAUSS, AJ
BREBRICK, RF
论文数:
0
引用数:
0
h-index:
0
BREBRICK, RF
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1970,
31
(10)
: 2293
-
&
[10]
VERIE C, 1965, CR HEBD ACAD SCI, V261, P3349
←
1
→
共 10 条
[1]
PARTIAL PRESSURES OF HG(G) AND TE2(G) IN HG-TE SYSTEM FROM OPTICAL DENSITIES
BREBRICK, RF
论文数:
0
引用数:
0
h-index:
0
BREBRICK, RF
STRAUSS, AJ
论文数:
0
引用数:
0
h-index:
0
STRAUSS, AJ
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1965,
26
(06)
: 989
-
&
[2]
DOPING PROPERTIES OF SELECTED IMPURITIES IN HG1-XCDXTE
JOHNSON, ES
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,RECH CTR,BLOOMINGTON,MN 55420
JOHNSON, ES
SCHMIT, JL
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,RECH CTR,BLOOMINGTON,MN 55420
SCHMIT, JL
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1977,
6
(01)
: 25
-
38
[3]
KOEHLER T, 1975, P SOC PHOTO-OPT INS, V62, P26
[4]
KOEHLER T, 1974, OPTICAL ENGINEER JUL
[5]
PHOTON EFFECTS IN HG1-XCDXTE
KRUSE, PW
论文数:
0
引用数:
0
h-index:
0
KRUSE, PW
[J].
APPLIED OPTICS,
1965,
4
(06):
: 687
-
&
[6]
LONG D, 1970, SEMICONDUCTORS SEMIM, V5, P234
[7]
NOBEL DD, 1959, PHILIPS RES REP, V14, P361
[8]
ELECTRICAL AND FAR-INFRARED OPTICAL-PROPERTIES OF P-TYPE HG-1-XCD-XTE
SCOTT, W
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL CORPORATE RES CTR,BLOOMINGTON,MN 55420
HONEYWELL CORPORATE RES CTR,BLOOMINGTON,MN 55420
SCOTT, W
STELZER, EL
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL CORPORATE RES CTR,BLOOMINGTON,MN 55420
HONEYWELL CORPORATE RES CTR,BLOOMINGTON,MN 55420
STELZER, EL
HAGER, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL CORPORATE RES CTR,BLOOMINGTON,MN 55420
HONEYWELL CORPORATE RES CTR,BLOOMINGTON,MN 55420
HAGER, RJ
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(04)
: 1408
-
1414
[9]
VAPOR-CRYSTAL EQUILIBRIUM AND ELECTRICAL PROPERTIES OF HGTE
STRAUSS, AJ
论文数:
0
引用数:
0
h-index:
0
STRAUSS, AJ
BREBRICK, RF
论文数:
0
引用数:
0
h-index:
0
BREBRICK, RF
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1970,
31
(10)
: 2293
-
&
[10]
VERIE C, 1965, CR HEBD ACAD SCI, V261, P3349
←
1
→