DOPING PROPERTIES OF SELECTED IMPURITIES IN HG1-XCDXTE

[1] ANDRIEVS.AI, 1974, SOV PHYS SEMICOND+, V7, P1112

[2] EPITAXIAL (CDHG)TE INFRARED PHOTOVOLTAIC DETECTORS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (10) : 436 - +

[3] HG-IMPLANTED HG1-XCDXTE INFRARED PHOTOVOLTAIC DETECTORS IN 8- TO 14-MU-M RANGE [J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 448 - 449

[4] TYPE CONVERSION AND N-P JUNCTION FORMATION IN HG1-XCDXTE PRODUCED BY PROTON BOMBARDMENT [J]. APPLIED PHYSICS LETTERS, 1971, 18 (08) : 321 - &

[5] Hu S. M., 1973, ATOMIC DIFFUSION SEM, P217

[6] LONG D, TOPICS APPLIED PHYSI

[7] LONG D, 1970, SEMICONDUCT SEMIMET, V5, P175

[8] INFRARED PHOTOVOLTAIC DETECTORS FROM ION-IMPLANTED CDXHG1-XTE [J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 450 - 452

[9] ELECTRICAL AND FAR-INFRARED OPTICAL-PROPERTIES OF P-TYPE HG-1-XCD-XTE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1408 - 1414

[10] CDCHIHG1-CHITE INFRARED PHOTOVOLTAIC DETECTORS [J]. APPLIED PHYSICS LETTERS, 1967, 10 (09) : 241 - &

[1] ANDRIEVS.AI, 1974, SOV PHYS SEMICOND+, V7, P1112

[2] EPITAXIAL (CDHG)TE INFRARED PHOTOVOLTAIC DETECTORS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (10) : 436 - +

[3] HG-IMPLANTED HG1-XCDXTE INFRARED PHOTOVOLTAIC DETECTORS IN 8- TO 14-MU-M RANGE [J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 448 - 449

[4] TYPE CONVERSION AND N-P JUNCTION FORMATION IN HG1-XCDXTE PRODUCED BY PROTON BOMBARDMENT [J]. APPLIED PHYSICS LETTERS, 1971, 18 (08) : 321 - &

[5] Hu S. M., 1973, ATOMIC DIFFUSION SEM, P217

[6] LONG D, TOPICS APPLIED PHYSI

[7] LONG D, 1970, SEMICONDUCT SEMIMET, V5, P175

[8] INFRARED PHOTOVOLTAIC DETECTORS FROM ION-IMPLANTED CDXHG1-XTE [J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 450 - 452

[9] ELECTRICAL AND FAR-INFRARED OPTICAL-PROPERTIES OF P-TYPE HG-1-XCD-XTE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1408 - 1414

[10] CDCHIHG1-CHITE INFRARED PHOTOVOLTAIC DETECTORS [J]. APPLIED PHYSICS LETTERS, 1967, 10 (09) : 241 - &