ELECTRICAL AND FAR-INFRARED OPTICAL-PROPERTIES OF P-TYPE HG-1-XCD-XTE

被引：119

作者：

SCOTT, W ^{[1
]}

STELZER, EL ^{[1
]}

HAGER, RJ ^{[1
]}

机构：

[1] HONEYWELL CORPORATE RES CTR,BLOOMINGTON,MN 55420

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 04期

关键词：

D O I：

10.1063/1.322801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1408 / 1414

页数：7

共 15 条

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[4]

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DEBYE PP, 1954, PHYS REV, V93, P653

[6] ELECTRICAL TRANSPORT PROPERTIES OF SEMICONDUCTING CDXHG1-XTE ALLOYS [J].

ELLIOTT, CT ;

SPAIN, IL .

SOLID STATE COMMUNICATIONS, 1970, 8 (24) :2063-&

[7] CARRIER FREEZE-OUT AND ACCEPTOR ENERGIES IN P-TYPE HG1-XCDXTE [J].

ELLIOTT, CT ;

FOYT, AG ;

MELNGAIL.I ;

HARMAN, TC .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (08) :1527-&

[8]

Harman T. C., 1972, J ELECTRON MATER, V1, P230

[9] HALL AND DRIFT MOBILITY OF POLAR P-TYPE SEMICONDUCTORS .2. APPLICATION TO ZNTE, CDTE, AND ZNSE [J].

KRANZER, D .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (20) :2977-2987

[10]

LONG D, 1970, SEMICONDUCT SEMIMET, V5, P175

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