THE ELECTRICAL-PROPERTIES OF PBTE IMPLANTED WITH H+, AG+ OR SN+

[1] MOBILITY OF ELECTRONS AND HOLES IN PBS, PBSE, AND PBTE BETWEEN ROOM TEMPERATURE AND 4.2-DEGREES-K [J]. PHYSICAL REVIEW, 1958, 111 (04): : 1029 - 1037

[2] BRICE DK, 1975, ION IMPLANTATION RAN, V1

[3] LOW-RESISTANCE, LONG-LIFE CONTACTS BY LASER-ANNEALING OF SILVER-IMPLANTED P-TYPE PBTE [J]. SOLID-STATE ELECTRONICS, 1981, 24 (07) : 675 - 680

[4] LONG-WAVELENGTH INFRARED PB1-XSNXTE DIODE LASERS [J]. APPLIED PHYSICS LETTERS, 1968, 12 (10) : 347 - &

[5] CALAWA AR, 1968, T METALL SOC AIME, V242, P374

[6] A REVIEW OF SEMICONDUCTOR PROPERTIES OF PBTE, PBSE, PBS AND PBO [J]. INFRARED PHYSICS, 1969, 9 (04): : 141 - +

[7] DEARNALEY G, 1973, ION IMPLANTATION, P766

[8] OPTICAL PROPERTIES OF SOME PB1-XSNXTE ALLOYS DETERMINED FROM INFRARED PLASMA REFLECTIVITY MEASUREMENTS [J]. PHYSICAL REVIEW B, 1972, 6 (10): : 3898 - &

[9] PB1-XSNXTE PHOTOVOLTAIC DIODES AND DIODE LASERS PRODUCED BY PROTON BOMBARDMENT [J]. SOLID-STATE ELECTRONICS, 1972, 15 (04) : 403 - &

[10] N-P JUNCTION PHOTOVOLTAIC DETECTORS IN PBTE PRODUCED BY PROTON BOMBARDMENT [J]. APPLIED PHYSICS LETTERS, 1971, 18 (06) : 259 - &

[1] MOBILITY OF ELECTRONS AND HOLES IN PBS, PBSE, AND PBTE BETWEEN ROOM TEMPERATURE AND 4.2-DEGREES-K [J]. PHYSICAL REVIEW, 1958, 111 (04): : 1029 - 1037

[2] BRICE DK, 1975, ION IMPLANTATION RAN, V1

[3] LOW-RESISTANCE, LONG-LIFE CONTACTS BY LASER-ANNEALING OF SILVER-IMPLANTED P-TYPE PBTE [J]. SOLID-STATE ELECTRONICS, 1981, 24 (07) : 675 - 680

[4] LONG-WAVELENGTH INFRARED PB1-XSNXTE DIODE LASERS [J]. APPLIED PHYSICS LETTERS, 1968, 12 (10) : 347 - &

[5] CALAWA AR, 1968, T METALL SOC AIME, V242, P374

[6] A REVIEW OF SEMICONDUCTOR PROPERTIES OF PBTE, PBSE, PBS AND PBO [J]. INFRARED PHYSICS, 1969, 9 (04): : 141 - +

[7] DEARNALEY G, 1973, ION IMPLANTATION, P766

[8] OPTICAL PROPERTIES OF SOME PB1-XSNXTE ALLOYS DETERMINED FROM INFRARED PLASMA REFLECTIVITY MEASUREMENTS [J]. PHYSICAL REVIEW B, 1972, 6 (10): : 3898 - &

[9] PB1-XSNXTE PHOTOVOLTAIC DIODES AND DIODE LASERS PRODUCED BY PROTON BOMBARDMENT [J]. SOLID-STATE ELECTRONICS, 1972, 15 (04) : 403 - &

[10] N-P JUNCTION PHOTOVOLTAIC DETECTORS IN PBTE PRODUCED BY PROTON BOMBARDMENT [J]. APPLIED PHYSICS LETTERS, 1971, 18 (06) : 259 - &