LOW-RESISTANCE, LONG-LIFE CONTACTS BY LASER-ANNEALING OF SILVER-IMPLANTED P-TYPE PBTE

被引：5

作者：

BRYANT, FJ

STAUDTE, DM

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(81)90198-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：675 / 680

页数：6

共 17 条

[1] [Anonymous], 1963, KGL DANSKE VIDENSKAB
[2] LUMINESCENCE OF ISOELECTRONIC TRAPS IN LASER-ANNEALED, TELLURIUM-COATED ZINC-SULFIDE
BRYANT, FJ
STAUDTE, DM
JEFFERY, PR
[J]. SOLID STATE COMMUNICATIONS, 1981, 37 (08) : 625 - 627
[3] DEARNALEY G, 1973, ION IMPLANTATION, P766
[4] Hansen M., 1958, CONSTITUTION BINARY, P582
[5] HEINRICH H, 1975, I PHYSICS C SER, V23, P264
[6] KOVALCHIK TL, 1958, SOV PHYS J F TECH PH, V26, P2337
[7] CONTACT RELIABILITY STUDIES ON LEAD-SALT DIODE-LASERS
LO, W
GIFFORD, FE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) : 1372 - 1375
[8] LO W, 1979, JPN J APPL PHYS S1, V18, P367
[9] LASER EMISSION FROM METAL-SEMICONDUCTOR BARRIERS ON PBTE AND PB0.8SN0.2TE
NILL, KW
CALAWA, AR
HARMAN, TC
[J]. APPLIED PHYSICS LETTERS, 1970, 16 (10) : 375 - &
[10] AN ELECTROLYTIC POLISH AND ETCH FOR LEAD TELLURIDE
NORR, MK
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (05) : 433 - 434