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CONTACT RELIABILITY STUDIES ON LEAD-SALT DIODE-LASERS
被引:11
作者
:
LO, W
论文数:
0
引用数:
0
h-index:
0
LO, W
GIFFORD, FE
论文数:
0
引用数:
0
h-index:
0
GIFFORD, FE
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1980年
/ 127卷
/ 06期
关键词
:
D O I
:
10.1149/1.2129901
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:1372 / 1375
页数:4
相关论文
共 20 条
[1]
ALLARIO F, COMMUNICATION
[2]
CHARACTERISTICS OF TUNABLE PB1-XSNX TE JUNCTION LASERS IN 8-12-MU-M REGION
ANTCLIFFE, GA
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTR INC, MS 134, DALLAS, TX 75222 USA
TEXAS INSTR INC, MS 134, DALLAS, TX 75222 USA
ANTCLIFFE, GA
PARKER, SG
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTR INC, MS 134, DALLAS, TX 75222 USA
TEXAS INSTR INC, MS 134, DALLAS, TX 75222 USA
PARKER, SG
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(09)
: 4145
-
4160
[3]
FLICKER H, COMMUNICATION
[4]
HINKLEY ED, COMMUNICATION
[5]
SINGLE HETEROSTRUCTURE LASERS OF PBS1-XSEX AND PB1-XSNXSE WITH WIDE TUNABILITY
LINDEN, KJ
论文数:
0
引用数:
0
h-index:
0
机构:
LASER ANALYT INC,LEXINGTON,MA 02173
LASER ANALYT INC,LEXINGTON,MA 02173
LINDEN, KJ
NILL, KW
论文数:
0
引用数:
0
h-index:
0
机构:
LASER ANALYT INC,LEXINGTON,MA 02173
LASER ANALYT INC,LEXINGTON,MA 02173
NILL, KW
BUTLER, JF
论文数:
0
引用数:
0
h-index:
0
机构:
LASER ANALYT INC,LEXINGTON,MA 02173
LASER ANALYT INC,LEXINGTON,MA 02173
BUTLER, JF
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1977,
13
(08)
: 720
-
725
[6]
INGOT-NUCLEATED PB1-XSNXTE DIODE LASERS
LO, W
论文数:
0
引用数:
0
h-index:
0
机构:
GM CORP,RES LABS,WARREN,MI 48090
GM CORP,RES LABS,WARREN,MI 48090
LO, W
MONTGOMERY, GP
论文数:
0
引用数:
0
h-index:
0
机构:
GM CORP,RES LABS,WARREN,MI 48090
GM CORP,RES LABS,WARREN,MI 48090
MONTGOMERY, GP
SWETS, DE
论文数:
0
引用数:
0
h-index:
0
机构:
GM CORP,RES LABS,WARREN,MI 48090
GM CORP,RES LABS,WARREN,MI 48090
SWETS, DE
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(01)
: 267
-
271
[7]
HOMOJUNCTION LEAD-TIN-TELLURIDE DIODE-LASERS WITH INCREASED FREQUENCY TUNING RANGE
LO, W
论文数:
0
引用数:
0
h-index:
0
机构:
GM CORP,RES LABS,WARREN,MI 48090
GM CORP,RES LABS,WARREN,MI 48090
LO, W
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1977,
13
(08)
: 591
-
595
[8]
DIFFUSED HOMOJUNCTION LEAD-SULFIDE-SELENIDE DIODES WITH 140 K-LASER OPERATION
LO, W
论文数:
0
引用数:
0
h-index:
0
LO, W
SWETS, DE
论文数:
0
引用数:
0
h-index:
0
SWETS, DE
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(11)
: 938
-
940
[9]
TELLURIUM-RICH GROWTH AND LASER FABRICATION OF LEAD-TIN-TELLURIDE (PB1-XSNXTE-0.06LESS-THAN X LESS-THAN 0.08
LO, W
论文数:
0
引用数:
0
h-index:
0
机构:
GM CORP,RES CTR,WARREN,MI 48090
GM CORP,RES CTR,WARREN,MI 48090
LO, W
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1977,
6
(01)
: 39
-
48
[10]
LO W, 1979, JPN J APPL PHYS S1, V18, P367
←
1
2
→
共 20 条
[1]
ALLARIO F, COMMUNICATION
[2]
CHARACTERISTICS OF TUNABLE PB1-XSNX TE JUNCTION LASERS IN 8-12-MU-M REGION
ANTCLIFFE, GA
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTR INC, MS 134, DALLAS, TX 75222 USA
TEXAS INSTR INC, MS 134, DALLAS, TX 75222 USA
ANTCLIFFE, GA
PARKER, SG
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTR INC, MS 134, DALLAS, TX 75222 USA
TEXAS INSTR INC, MS 134, DALLAS, TX 75222 USA
PARKER, SG
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(09)
: 4145
-
4160
[3]
FLICKER H, COMMUNICATION
[4]
HINKLEY ED, COMMUNICATION
[5]
SINGLE HETEROSTRUCTURE LASERS OF PBS1-XSEX AND PB1-XSNXSE WITH WIDE TUNABILITY
LINDEN, KJ
论文数:
0
引用数:
0
h-index:
0
机构:
LASER ANALYT INC,LEXINGTON,MA 02173
LASER ANALYT INC,LEXINGTON,MA 02173
LINDEN, KJ
NILL, KW
论文数:
0
引用数:
0
h-index:
0
机构:
LASER ANALYT INC,LEXINGTON,MA 02173
LASER ANALYT INC,LEXINGTON,MA 02173
NILL, KW
BUTLER, JF
论文数:
0
引用数:
0
h-index:
0
机构:
LASER ANALYT INC,LEXINGTON,MA 02173
LASER ANALYT INC,LEXINGTON,MA 02173
BUTLER, JF
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1977,
13
(08)
: 720
-
725
[6]
INGOT-NUCLEATED PB1-XSNXTE DIODE LASERS
LO, W
论文数:
0
引用数:
0
h-index:
0
机构:
GM CORP,RES LABS,WARREN,MI 48090
GM CORP,RES LABS,WARREN,MI 48090
LO, W
MONTGOMERY, GP
论文数:
0
引用数:
0
h-index:
0
机构:
GM CORP,RES LABS,WARREN,MI 48090
GM CORP,RES LABS,WARREN,MI 48090
MONTGOMERY, GP
SWETS, DE
论文数:
0
引用数:
0
h-index:
0
机构:
GM CORP,RES LABS,WARREN,MI 48090
GM CORP,RES LABS,WARREN,MI 48090
SWETS, DE
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(01)
: 267
-
271
[7]
HOMOJUNCTION LEAD-TIN-TELLURIDE DIODE-LASERS WITH INCREASED FREQUENCY TUNING RANGE
LO, W
论文数:
0
引用数:
0
h-index:
0
机构:
GM CORP,RES LABS,WARREN,MI 48090
GM CORP,RES LABS,WARREN,MI 48090
LO, W
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1977,
13
(08)
: 591
-
595
[8]
DIFFUSED HOMOJUNCTION LEAD-SULFIDE-SELENIDE DIODES WITH 140 K-LASER OPERATION
LO, W
论文数:
0
引用数:
0
h-index:
0
LO, W
SWETS, DE
论文数:
0
引用数:
0
h-index:
0
SWETS, DE
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(11)
: 938
-
940
[9]
TELLURIUM-RICH GROWTH AND LASER FABRICATION OF LEAD-TIN-TELLURIDE (PB1-XSNXTE-0.06LESS-THAN X LESS-THAN 0.08
LO, W
论文数:
0
引用数:
0
h-index:
0
机构:
GM CORP,RES CTR,WARREN,MI 48090
GM CORP,RES CTR,WARREN,MI 48090
LO, W
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1977,
6
(01)
: 39
-
48
[10]
LO W, 1979, JPN J APPL PHYS S1, V18, P367
←
1
2
→