INGOT-NUCLEATED PB1-XSNXTE DIODE LASERS

被引：30

作者：

LO, W ^{[1
]}

MONTGOMERY, GP ^{[1
]}

SWETS, DE ^{[1
]}

机构：

[1] GM CORP,RES LABS,WARREN,MI 48090

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 01期

关键词：

D O I：

10.1063/1.322311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：267 / 271

页数：5

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[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4145 - 4160
[2] LONG-WAVELENGTH INFRARED PB1-XSNXTE DIODE LASERS
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[J]. APPLIED PHYSICS LETTERS, 1968, 12 (10) : 347 - &
[3] HORIZONTAL UNSEEDED VAPOR GROWTH OF IV-VI COMPOUNDS AND ALLOYS
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (04) : 843 - 854
[4] AN ELECTROLYTIC POLISH AND ETCH FOR LEAD TELLURIDE
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (05) : 433 - 434
[5] PARKER SF, COMMUNICATION
[6] GROWTH OF LARGE CRYSTALS OF (PB,GE)TE AND (PB,SN)TE
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JOHNSON, RE
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (04) : 731 - 746
[7] HIGH-POWER OUTPUT IN PB1-XSNXTE DIODE LASERS WITH IMPROVED MIRROR QUALITY
WALPOLE, JN
CALAWA, AR
RALSTON, RW
HARMAN, TC
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) : 2905 - 2907
[8] SINGLE HETEROJUNCTION PB1- SN TE DIODE LASERS
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[J]. APPLIED PHYSICS LETTERS, 1973, 23 (11) : 620 - 622