TELLURIUM-RICH GROWTH AND LASER FABRICATION OF LEAD-TIN-TELLURIDE (PB1-XSNXTE-0.06LESS-THAN X LESS-THAN 0.08

被引：17

作者：

LO, W ^{[1
]}

机构：

[1] GM CORP,RES CTR,WARREN,MI 48090

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1977年 / 6卷 / 01期

关键词：

D O I：

10.1007/BF02660336

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：39 / 48

页数：10

共 9 条

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[9] HIGH-POWER OUTPUT IN PB1-XSNXTE DIODE LASERS WITH IMPROVED MIRROR QUALITY [J].

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JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) :2905-2907

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