INHOMOGENEITY MODEL FOR ANOMALOUS HALL-EFFECTS IN N-TYPE HG0.8CD0.2 TE LIQUID-PHASE-EPITAXY FILMS

被引：45

作者：

CHEN, MC

PARKER, SG

WEIRAUCH, DF

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 08期

关键词：

D O I：

10.1063/1.335819

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3150 / 3153

页数：4

共 11 条

[1]

BECK JD, 1984, UNPUB

[2] ELECTRICAL CHARACTERIZATION OF SEMICONDUCTORS [J].

BLOOD, P ;

ORTON, JW .

REPORTS ON PROGRESS IN PHYSICS, 1978, 41 (02) :157-257

[3] ANOMALOUS ELECTRICAL PROPERTIES OF PARA-TYPE INDIUM ARSENIDE [J].

DIXON, JR .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (09) :1412-1416

[4] INTRINSIC CARRIER CONCENTRATION IN SEMICONDUCTING CDXHG1-XTE ALLOYS [J].

ELLIOTT, CT .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (05) :697-&

[5] ELECTRICAL TRANSPORT PROPERTIES OF SEMICONDUCTING CDXHG1-XTE ALLOYS [J].

ELLIOTT, CT ;

SPAIN, IL .

SOLID STATE COMMUNICATIONS, 1970, 8 (24) :2063-&

[6] XPS INVESTIGATION OF THE OXIDATION OF HG1-XCDXTE SURFACES [J].

KOWALCZYK, SP ;

CHEUNG, JT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :944-948

[7] HALL-EFFECT AND RESISTIVITY IN LIQUID-PHASE-EPITAXIAL LAYERS OF HGCDTE [J].

LOU, LF ;

FRYE, WH .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (08) :2253-2267

[8] THEORY OF AN EXPERIMENT FOR MEASURING THE MOBILITY AND DENSITY OF CARRIERS IN THE SPACE-CHARGE REGION OF A SEMICONDUCTOR SURFACE [J].

PETRITZ, RL .

PHYSICAL REVIEW, 1958, 110 (06) :1254-1262

[9] INTRINSIC CARRIER CONCENTRATION OF HG1-CHICDCHITE AS A FUNCTION OF CHI AND T USING K-P CALCULATIONS [J].

SCHMIT, JL .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :2876-&

[10] ANOMALOUS ELECTRICAL PROPERTIES OF P-TYPE HG1-XCDXTE [J].

SCOTT, W ;

HAGER, RJ .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) :803-&

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