ELECTRICAL CHARACTERIZATION OF SEMICONDUCTORS

[1] ELECTRON LIFETIME AND DIFFUSION CONSTANT IN GERMANIUM-DOPED GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3033 - 3040

[2] GAAS REFLECTION PHOTOCATHODES GROWN BY METAL ALKYL VAPOR-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1976, 28 (03) : 113 - 115

[3] ALLENSON MB, 1973, SERL TECH J, V23

[4] AUTOMATIC CARRIER CONCENTRATION PROFILE PLOTTER USING AN ELECTROCHEMICAL TECHNIQUE [J]. JOURNAL OF APPLIED ELECTROCHEMISTRY, 1975, 5 (04) : 319 - 328

[5] Ambridge T., 1975, Gallium Arsenide and Related Compounds, 1974, P320

[6] ELECTROCHEMICAL CAPACITANCE CHARACTERIZATION OF N-TYPE GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED ELECTROCHEMISTRY, 1974, 4 (02) : 135 - &

[7] Ambridge T., 1973, J APPL ELECTROCHEM, V3, P1

[8] Ambrozy A., 1970, Solid-State Electronics, V13, P347, DOI 10.1016/0038-1101(70)90185-1

[9] AMRON I, 1967, ELECTROCHEM TECHNOL, V5, P94

[10] Andersson A., 1972, Radiation Effects, V15, P231, DOI 10.1080/00337577208234698

[1] ELECTRON LIFETIME AND DIFFUSION CONSTANT IN GERMANIUM-DOPED GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3033 - 3040

[2] GAAS REFLECTION PHOTOCATHODES GROWN BY METAL ALKYL VAPOR-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1976, 28 (03) : 113 - 115

[3] ALLENSON MB, 1973, SERL TECH J, V23

[4] AUTOMATIC CARRIER CONCENTRATION PROFILE PLOTTER USING AN ELECTROCHEMICAL TECHNIQUE [J]. JOURNAL OF APPLIED ELECTROCHEMISTRY, 1975, 5 (04) : 319 - 328

[5] Ambridge T., 1975, Gallium Arsenide and Related Compounds, 1974, P320

[6] ELECTROCHEMICAL CAPACITANCE CHARACTERIZATION OF N-TYPE GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED ELECTROCHEMISTRY, 1974, 4 (02) : 135 - &

[7] Ambridge T., 1973, J APPL ELECTROCHEM, V3, P1

[8] Ambrozy A., 1970, Solid-State Electronics, V13, P347, DOI 10.1016/0038-1101(70)90185-1

[9] AMRON I, 1967, ELECTROCHEM TECHNOL, V5, P94

[10] Andersson A., 1972, Radiation Effects, V15, P231, DOI 10.1080/00337577208234698