ELECTROCHEMICAL CAPACITANCE CHARACTERIZATION OF N-TYPE GALLIUM-ARSENIDE

被引：20

作者：

AMBRIDGE, T ^{[1
]}

FAKTOR, MM ^{[1
]}

机构：

[1] PO RES DEPT,DOLLIS HILL,LONDON,ENGLAND

来源：

关键词：

D O I：

10.1007/BF00609022

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：135 / &

共 18 条

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[2] BIRINTSEVA TP, 1965, B ACAD SCIENCES CHEM, V2, P236
[3] SCHOTTKY-BARRIER CAPACITANCE MEASUREMENTS FOR DEEP LEVEL IMPURITY DETERMINATION
BLEICHER, M
LANGE, E
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (03) : 375 - 380
[4] BODDY PJ, 1967, PROGR SOLID STATE CH, V4
[5] AUTOMATIC PLOTTING SYSTEM FOR ELECTROCHEMICAL CHARACTERIZATION OF N-TYPE GALLIUM-ARSENIDE
BREMNER, EG
AMBRIDGE, T
ELLIOTT, CR
[J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1973, 6 (04): : 326 - 329
[6] FIDDYMENT DG, TO BE PUBLISHED
[7] GERISCHER H, 1970, PHYSICAL CHEM ADV TR, pCH5
[8] GERISCHER VH, 1965, BER BUNSENGES PHYSIK, V69, P578
[9] KUHNKUHNENFELD F, 1972, J ELECTROCHEM SOC, V119, P1064
[10] Myamlin V.A., 1967, ELECTROCHEMISTRY SEM