ELECTRICAL CHARACTERIZATION OF SEMICONDUCTORS

[31] PHOTOLUMINESCENCE OF AG-DOPED P-TYPE GAAS [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (16) : 1265 - &

[32] ELECTRICAL PROPERTIES OF N-TYPE EPITAXIAL GAAS AT HIGH-TEMPERATURES [J]. PHYSICAL REVIEW B, 1972, 6 (06): : 2257 - &

[33] SCATTERING FACTOR FOR GEOMETRICAL MAGNETORESISTANCE IN GAAS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (09) : L29 - &

[34] ORIGIN OF NON-GAUSSIAN PROFILES IN PHOSPHORUS-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) : 5123 - 5128

[35] AUTOMATIC SYSTEM FOR LOW-TEMPERATURE ELECTRICAL MEASUREMENTS ON SEMICONDUCTORS [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1975, 8 (11): : 958 - 963

[36] ELECTRICAL PROPERTIES OF N-TYPE EPITAXIAL INP IN TEMPERATURE-RANGE 5 K TO 700 K [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (05): : 893 - 904

[37] BORISOVA LA, 1972, SOV PHYS SEMICOND+, V6, P693

[38] BOUDRY MR, 1976, BIOMED COMP TECH APR, P48

[39] AUTOMATIC PLOTTING SYSTEM FOR ELECTROCHEMICAL CHARACTERIZATION OF N-TYPE GALLIUM-ARSENIDE [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1973, 6 (04): : 326 - 329

[40] CORRECTING INTERFACE-STATE ERRORS IN MOS DOPING PROFILE DETERMINATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 3228 - 3231

[31] PHOTOLUMINESCENCE OF AG-DOPED P-TYPE GAAS [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (16) : 1265 - &

[32] ELECTRICAL PROPERTIES OF N-TYPE EPITAXIAL GAAS AT HIGH-TEMPERATURES [J]. PHYSICAL REVIEW B, 1972, 6 (06): : 2257 - &

[33] SCATTERING FACTOR FOR GEOMETRICAL MAGNETORESISTANCE IN GAAS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (09) : L29 - &

[34] ORIGIN OF NON-GAUSSIAN PROFILES IN PHOSPHORUS-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) : 5123 - 5128

[35] AUTOMATIC SYSTEM FOR LOW-TEMPERATURE ELECTRICAL MEASUREMENTS ON SEMICONDUCTORS [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1975, 8 (11): : 958 - 963

[36] ELECTRICAL PROPERTIES OF N-TYPE EPITAXIAL INP IN TEMPERATURE-RANGE 5 K TO 700 K [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (05): : 893 - 904

[37] BORISOVA LA, 1972, SOV PHYS SEMICOND+, V6, P693

[38] BOUDRY MR, 1976, BIOMED COMP TECH APR, P48

[39] AUTOMATIC PLOTTING SYSTEM FOR ELECTROCHEMICAL CHARACTERIZATION OF N-TYPE GALLIUM-ARSENIDE [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1973, 6 (04): : 326 - 329

[40] CORRECTING INTERFACE-STATE ERRORS IN MOS DOPING PROFILE DETERMINATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 3228 - 3231