ANOMALOUS ELECTRICAL PROPERTIES OF PARA-TYPE INDIUM ARSENIDE

被引：22

作者：

DIXON, JR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1959年 / 30卷 / 09期

关键词：

D O I：

10.1063/1.1735344

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1412 / 1416

页数：5

共 11 条

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[8] THE INTERACTION OF IMPURITY ATOMS WITH DISLOCATIONS IN GERMANIUM [J].

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[9] TEMPERATURE DEPENDENCE OF OPTICAL ABSORPTION IN P-TYPE INDIUM ARSENIDE [J].

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[10] ZUM ANOMALEN TEMPERATURVERLAUF DES HALL-KOEFFIZIENTEN VON SCHWACH P-DOTIERTEM INAS [J].

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