EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF INDIUM ARSENIDE

[1] QUENCHED-IN RECOMBINATION CENTERS IN SILICON [J]. PHYSICAL REVIEW, 1956, 103 (03): : 567 - 569

[2] ANNEALING OF ELECTRON BOMBARDMENT DAMAGE IN SILICON CRYSTALS [J]. PHYSICAL REVIEW, 1957, 108 (03): : 645 - 648

[3] BOOMGAARD J, 1957, PHILIPS RES REP, V12, P127

[4] ELECTRICAL PROPERTIES AND THE SOLID-VAPOR EQUILIBRIUM OF LEAD SULFIDE [J]. PHYSICAL REVIEW, 1954, 96 (03): : 598 - 602

[5] IMPURITY CENTERS IN GE AND SI [J]. PHYSICA, 1954, 20 (10): : 845 - 854

[6] Cottrell A H, 1953, DISLOCATIONS PLASTIC, P134

[7] CRAWFORD JH, 1957, PROGR SEMICONDUCTORS, V2, P69

[8] PHOTOELECTROMAGNETIC EFFECT IN INDIUM ARSENIDE [J]. PHYSICAL REVIEW, 1957, 107 (02): : 374 - 378

[9] ENRIGHT DP, 1958, 6024 NAV ORDN LAB RE

[10] ANNEALING OF BOMBARDMENT DAMAGE IN A DIAMOND-TYPE LATTICE - THEORETICAL [J]. PHYSICAL REVIEW, 1953, 92 (03): : 585 - 590

[1] QUENCHED-IN RECOMBINATION CENTERS IN SILICON [J]. PHYSICAL REVIEW, 1956, 103 (03): : 567 - 569

[2] ANNEALING OF ELECTRON BOMBARDMENT DAMAGE IN SILICON CRYSTALS [J]. PHYSICAL REVIEW, 1957, 108 (03): : 645 - 648

[3] BOOMGAARD J, 1957, PHILIPS RES REP, V12, P127

[4] ELECTRICAL PROPERTIES AND THE SOLID-VAPOR EQUILIBRIUM OF LEAD SULFIDE [J]. PHYSICAL REVIEW, 1954, 96 (03): : 598 - 602

[5] IMPURITY CENTERS IN GE AND SI [J]. PHYSICA, 1954, 20 (10): : 845 - 854

[6] Cottrell A H, 1953, DISLOCATIONS PLASTIC, P134

[7] CRAWFORD JH, 1957, PROGR SEMICONDUCTORS, V2, P69

[8] PHOTOELECTROMAGNETIC EFFECT IN INDIUM ARSENIDE [J]. PHYSICAL REVIEW, 1957, 107 (02): : 374 - 378

[9] ENRIGHT DP, 1958, 6024 NAV ORDN LAB RE

[10] ANNEALING OF BOMBARDMENT DAMAGE IN A DIAMOND-TYPE LATTICE - THEORETICAL [J]. PHYSICAL REVIEW, 1953, 92 (03): : 585 - 590