PHOTOCONDUCTIVE RESPONSE OF GAAS EPITAXIAL LAYERS

被引：8

作者：

ANAGNOSTAKIS, EA

机构：

[1] Section of Solid State Physics, Department of Physics, University of Athens, Zografos

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1992年 / 54卷 / 01期

关键词：

D O I：

10.1007/BF00348133

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the present work the photoconductive response of low resistivity, n-type GaAs epitaxial layers is studied by experimentally monitoring the dependence of the photoconductive gain (PG) optoelectronic parameter upon incident photon flux and temperature. The characterized samples fall into three major categories: ion implanted (II) GaAs epilayers formed within undoped, semi-insulating GaAs substrates; GaAs epitaxial layers grown by liquid phase epitaxy (LPE) on Cr-doped, semi-insulating GaAs substrates; and ungated GaAs MESFETs.

引用

页码：68 / 71

页数：4

共 14 条

[1]

ANAGNOSTAKIS EA, 1991, PHYS STATUS SOLIDI A, V127

[2]

ANAGNOSTAKIS EA, 1991, PHYS STATUS SOLIDI A, V126

[3]

BASTARD G, 1988, MONOGRAPHIES PHYSIQU, pCH7

[4] INFLUENCE OF TRANSPORT-PROPERTIES ON THE EXCITATION-SPECTRA OF GAAS/ALXGA1-XAS SUPERLATTICES AND BULK LAYERS [J].