ELECTRICAL-PROPERTIES OF UNDOPED LARGE-GRAIN AND SMALL-GRAIN DIAMOND FILMS

被引：18

作者：

HUANG, BR ^{[1
]}

REINHARD, DK ^{[1
]}

ASMUSSEN, J ^{[1
]}

机构：

[1] MICHIGAN STATE UNIV, DEPT ELECT ENGN, 260 ENGN BLDG, E LANSING, MI 48824 USA

来源：

关键词：

D O I：

10.1016/0925-9635(93)90229-U

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical properties of diamond and of the metal-contact to diamond interface depend strongly on preparation conditions. A microwave plasma assisted chemical vapor deposition technique was used to deposit undoped diamond films with a variety of grain sizes. Schottky barrier contacts were achievable with rectification ratios as high as 2 x 10(5). The current-voltage characteristics of such samples were modeled as a Schottky barrier diode in series with bulk diamond, for which the property of the bulk diamond follows an I is-proportional-to V(m) relationship indicative of space-charge-limited current. Generally the low-voltage rectification ratio, which is indicative of diode quality, increased with increasing grain size for a given set of deposition conditions.

引用

页码：812 / 815

页数：4

共 14 条

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[14] AN INVESTIGATION OF ELECTROMAGNETIC-FIELD PATTERNS DURING MICROWAVE PLASMA DIAMOND THIN-FILM DEPOSITION [J].

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HUANG, B ;

REINHARD, DK ;

ASMUSSEN, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1990, 8 (03) :2124-2128

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