AUGER DEPTH PROFILING OF MNOS STRUCTURES BY ION SPUTTERING

被引：39

作者：

JOHANNESSEN, JS

HELMS, CR

SPICER, WE

STRAUSSER, YE

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

[2] VARIAN ASSOC,PALO ALTO,CA 94305

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 05期

关键词：

D O I：

10.1109/T-ED.1977.18776

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：547 / 551

页数：5

共 9 条

[1]

BOTTOMS WR, 1975, CRC CRIT R SOLID ST, P297

[2] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J].

FROHMANB.D ;

LENZLINGER, M .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3307-+

[3] AUGER ANALYSIS OF SIO2-SI INTERFACE [J].

JOHANNESSEN, JS ;

SPICER, WE ;

STRAUSSER, YE .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3028-3037

[4]

JOHANNESSEN JS, TO BE PUBLISHED

[5] PROBING DEPTH IN PHOTOEMISSION AND AUGER-ELECTRON SPECTROSCOPY [J].

LINDAU, I ;

SPICER, WE .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 3 (05) :409-413

[6]

LUNDSTROM I, 1972, IEEE T ELECTRON DEV, V19, P826

[7]

PENN DR, TO BE PUBLISHED

[8]

STRAUSSER YE, 1976, NBS40023 SPEC PUBL, P125

[9]

Wallmark J. T., 1969, RCA Review, V30, P335

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