ELECTRON TUNNELLING INTO INTERFACIAL LANDAU STATES IN SINGLE BARRIER N-TYPE (INGA)AS/INP/(INGA)AS HETEROSTRUCTURES

被引：10

作者：

CHAN, KS

EAVES, L

MAUDE, DK

SHEARD, FW

SNELL, BR

TOOMBS, GA

ALVES, ES

PORTAL, JC

BASS, S

机构：

[1] INST NATL SCI APPL LYON,LPS,F-31077 TOULOUSE,FRANCE

[2] CNRS,SNCI,F-38042 GRENOBLE,FRANCE

[3] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 3-4期

关键词：

This work is supported by SERC (UK) and CNRS (France).ESA is supported by CNPq (Brazil);

D O I：

10.1016/0038-1101(88)90373-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：711 / 716

页数：6

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