HYPERFINE INTERACTIONS OF IN-111 IMPLANTED TIN OXIDE THIN-FILMS

被引：17

作者：

RENTERIA, M ^{[1
]}

BIBILONI, AG ^{[1
]}

MORENO, MS ^{[1
]}

DESIMONI, J ^{[1
]}

MERCADER, RC ^{[1
]}

BARTOS, A ^{[1
]}

UHRMACHER, M ^{[1
]}

LIEB, KP ^{[1
]}

机构：

[1] UNIV GOTTINGEN,INST PHYS 2,W-3400 GOTTINGEN,GERMANY

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1991年 / 3卷 / 20期

关键词：

D O I：

10.1088/0953-8984/3/20/023

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Thin Sn-O films were prepared by thermal evaporation of high-purity tin in a low-pressure oxygen atmosphere. The films were monitored by conversion electron Mossbauer spectroscopy (CEMS). Radioactive In-111+-ions were implanted into the films and perturbed angular correlation (PAC) measurements were carried out in air after different annealings up to 1023 K. Two phases were sufficient to describe the PAC data, which are attributed to SnO and SnO2. The temperature dependence of these phases was found to agree with CEMS measurements on Sn-O films after similar annealing programmes.

引用

页码：3625 / 3634

页数：10

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