SUBMICRON AREA NBN/MGO/NBN TUNNEL-JUNCTIONS FOR SIS MIXER APPLICATIONS

被引：16

作者：

LEDUC, HG

JUDAS, A

CYPHER, SR

BUMBLE, B

HUNT, BD

STERN, JA

机构：

[1] Center for Space Microelectronics Technology, The Jet Propulsion Laboratory, California Institute of Technology, Pasadena

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1991年 / 27卷 / 02期

关键词：

D O I：

10.1109/20.133890

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on progress in the development of submicron area mixer elements for operation in the submillimeter wave range. High current density NbN/MgO/NbN tunnel junctions with areas down to 0.1-mu-m2 have been fabricated in both planar and edge geometries. The planar junctions were fabricated from insitu deposited trilayers using electron-beam lithography to pattern submicron area mesas. Modifications of fabrication techniques used in larger area NbN tunnel junctions are required and will be discussed. The NbN/MgO/NbN edge junction process using sapphire substrates reported earlier has been transferred to technologically important quartz substrates using MgO buffer layers to minimize substrate interactions. The two junction geometries will be compared and contrasted in the context of submillimeter wave mixer applications.

引用

页码：3192 / 3195

页数：4

共 6 条

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IEEE TRANSACTIONS ON MAGNETICS, 1991, 27 (02) :2650-2653

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