THE P-SI FLUORIDE INTERFACE IN THE ANODIC REGION - DAMPED AND OR SUSTAINED OSCILLATIONS

被引：54

作者：

CHAZALVIEL, JN

OZANAM, F

ETMAN, M

PAOLUCCI, F

PETER, LM

STUMPER, J

机构：

[1] CNRS,ELECTROCHIM INTERFACIALE LAB,F-92195 MEUDON,FRANCE

[2] UNIV SOUTHAMPTON,DEPT CHEM,SOUTHAMPTON SO9 5NH,HANTS,ENGLAND

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1992年 / 327卷 / 1-2期

关键词：

D O I：

10.1016/0022-0728(92)80160-6

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

[No abstract available]

引用

页码：343 / 349

页数：7

共 13 条

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[3] CHARGE-EXCHANGE MECHANISM RESPONSIBLE FOR P-TYPE SILICON DISSOLUTION DURING POROUS SILICON FORMATION
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[8] DECONVOLUTION OF CHARGE INJECTION STEPS IN QUANTUM YIELD MULTIPLICATION ON SILICON
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[J]. PHYSICAL REVIEW LETTERS, 1988, 61 (17) : 1989 - 1992
[9] CURRENT OSCILLATIONS IN THE ANODIC-DISSOLUTION OF SILICON IN FLUORIDE ELECTROLYTES
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[J]. BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1991, 95 (01): : 98 - 101
[10] OZANAM F, UNPUB J ELECTROCHEM