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CHARGE-EXCHANGE MECHANISM RESPONSIBLE FOR P-TYPE SILICON DISSOLUTION DURING POROUS SILICON FORMATION
被引:53
作者
:
GASPARD, F
论文数:
0
引用数:
0
h-index:
0
GASPARD, F
BSIESY, A
论文数:
0
引用数:
0
h-index:
0
BSIESY, A
LIGEON, M
论文数:
0
引用数:
0
h-index:
0
LIGEON, M
MULLER, F
论文数:
0
引用数:
0
h-index:
0
MULLER, F
HERINO, R
论文数:
0
引用数:
0
h-index:
0
HERINO, R
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1989年
/ 136卷
/ 10期
关键词
:
D O I
:
10.1149/1.2096399
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:3043 / 3046
页数:4
相关论文
共 13 条
[1]
FORMATION AND PROPERTIES OF POROUS SILICON FILM
ARITA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,ELECT COMMUN LABS,MUSASHINO,TOKYO,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,ELECT COMMUN LABS,MUSASHINO,TOKYO,JAPAN
ARITA, Y
SUNOHARA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,ELECT COMMUN LABS,MUSASHINO,TOKYO,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,ELECT COMMUN LABS,MUSASHINO,TOKYO,JAPAN
SUNOHARA, Y
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(02)
: 285
-
295
[2]
CHARACTERISTICS OF SOI CMOS CIRCUITS MADE IN N/N+/N OXIDIZED POROUS SILICON STRUCTURES
BARLA, K
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON SEMICOND,EFCIS,F-38019 GRENOBLE,FRANCE
THOMSON SEMICOND,EFCIS,F-38019 GRENOBLE,FRANCE
BARLA, K
BOMCHIL, G
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON SEMICOND,EFCIS,F-38019 GRENOBLE,FRANCE
THOMSON SEMICOND,EFCIS,F-38019 GRENOBLE,FRANCE
BOMCHIL, G
HERINO, R
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON SEMICOND,EFCIS,F-38019 GRENOBLE,FRANCE
THOMSON SEMICOND,EFCIS,F-38019 GRENOBLE,FRANCE
HERINO, R
MONROY, A
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON SEMICOND,EFCIS,F-38019 GRENOBLE,FRANCE
THOMSON SEMICOND,EFCIS,F-38019 GRENOBLE,FRANCE
MONROY, A
GRIS, Y
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON SEMICOND,EFCIS,F-38019 GRENOBLE,FRANCE
THOMSON SEMICOND,EFCIS,F-38019 GRENOBLE,FRANCE
GRIS, Y
[J].
ELECTRONICS LETTERS,
1986,
22
(24)
: 1291
-
1293
[3]
AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON
BEALE, MIJ
论文数:
0
引用数:
0
h-index:
0
BEALE, MIJ
BENJAMIN, JD
论文数:
0
引用数:
0
h-index:
0
BENJAMIN, JD
UREN, MJ
论文数:
0
引用数:
0
h-index:
0
UREN, MJ
CHEW, NG
论文数:
0
引用数:
0
h-index:
0
CHEW, NG
CULLIS, AG
论文数:
0
引用数:
0
h-index:
0
CULLIS, AG
[J].
JOURNAL OF CRYSTAL GROWTH,
1985,
73
(03)
: 622
-
636
[4]
BERTRAND C, 1986, THESIS U GRENOBLE FR
[5]
BOCKRIS JOM, 1974, MODERN ELECTROCHEMIS
[6]
MECHANISMS OF DECOMPOSITION OF SEMICONDUCTORS BY ELECTROCHEMICAL OXIDATION AND REDUCTION
GERISCHE.H
论文数:
0
引用数:
0
h-index:
0
机构:
Institute for Physical Chemistry and Electrochemistry, Technical University, Munich
GERISCHE.H
MINDT, W
论文数:
0
引用数:
0
h-index:
0
机构:
Institute for Physical Chemistry and Electrochemistry, Technical University, Munich
MINDT, W
[J].
ELECTROCHIMICA ACTA,
1968,
13
(06)
: 1329
-
&
[7]
POROSITY AND PORE-SIZE DISTRIBUTIONS OF POROUS SILICON LAYERS
HERINO, R
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE
HERINO, R
BOMCHIL, G
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE
BOMCHIL, G
BARLA, K
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE
BARLA, K
BERTRAND, C
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE
BERTRAND, C
GINOUX, JL
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE
GINOUX, JL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1987,
134
(8A)
: 1994
-
2000
[8]
ANODIC DISSOLUTION OF SILICON IN HYDROFLUORIC ACID SOLUTIONS
MEMMING, R
论文数:
0
引用数:
0
h-index:
0
MEMMING, R
SCHWANDT, G
论文数:
0
引用数:
0
h-index:
0
SCHWANDT, G
[J].
SURFACE SCIENCE,
1966,
4
(02)
: 109
-
&
[9]
POTENTIAL DISTRIBUTION AND FORMATION OF SURFACE STATES AT SILICON-ELECTROLYTE INTERFACE
MEMMING, R
论文数:
0
引用数:
0
h-index:
0
MEMMING, R
SCHWANDT, G
论文数:
0
引用数:
0
h-index:
0
SCHWANDT, G
[J].
SURFACE SCIENCE,
1966,
5
(01)
: 97
-
&
[10]
Memming R, 1983, COMPREHENSIVE TREATI, V7
←
1
2
→
共 13 条
[1]
FORMATION AND PROPERTIES OF POROUS SILICON FILM
ARITA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,ELECT COMMUN LABS,MUSASHINO,TOKYO,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,ELECT COMMUN LABS,MUSASHINO,TOKYO,JAPAN
ARITA, Y
SUNOHARA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,ELECT COMMUN LABS,MUSASHINO,TOKYO,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,ELECT COMMUN LABS,MUSASHINO,TOKYO,JAPAN
SUNOHARA, Y
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(02)
: 285
-
295
[2]
CHARACTERISTICS OF SOI CMOS CIRCUITS MADE IN N/N+/N OXIDIZED POROUS SILICON STRUCTURES
BARLA, K
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON SEMICOND,EFCIS,F-38019 GRENOBLE,FRANCE
THOMSON SEMICOND,EFCIS,F-38019 GRENOBLE,FRANCE
BARLA, K
BOMCHIL, G
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON SEMICOND,EFCIS,F-38019 GRENOBLE,FRANCE
THOMSON SEMICOND,EFCIS,F-38019 GRENOBLE,FRANCE
BOMCHIL, G
HERINO, R
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON SEMICOND,EFCIS,F-38019 GRENOBLE,FRANCE
THOMSON SEMICOND,EFCIS,F-38019 GRENOBLE,FRANCE
HERINO, R
MONROY, A
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON SEMICOND,EFCIS,F-38019 GRENOBLE,FRANCE
THOMSON SEMICOND,EFCIS,F-38019 GRENOBLE,FRANCE
MONROY, A
GRIS, Y
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON SEMICOND,EFCIS,F-38019 GRENOBLE,FRANCE
THOMSON SEMICOND,EFCIS,F-38019 GRENOBLE,FRANCE
GRIS, Y
[J].
ELECTRONICS LETTERS,
1986,
22
(24)
: 1291
-
1293
[3]
AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON
BEALE, MIJ
论文数:
0
引用数:
0
h-index:
0
BEALE, MIJ
BENJAMIN, JD
论文数:
0
引用数:
0
h-index:
0
BENJAMIN, JD
UREN, MJ
论文数:
0
引用数:
0
h-index:
0
UREN, MJ
CHEW, NG
论文数:
0
引用数:
0
h-index:
0
CHEW, NG
CULLIS, AG
论文数:
0
引用数:
0
h-index:
0
CULLIS, AG
[J].
JOURNAL OF CRYSTAL GROWTH,
1985,
73
(03)
: 622
-
636
[4]
BERTRAND C, 1986, THESIS U GRENOBLE FR
[5]
BOCKRIS JOM, 1974, MODERN ELECTROCHEMIS
[6]
MECHANISMS OF DECOMPOSITION OF SEMICONDUCTORS BY ELECTROCHEMICAL OXIDATION AND REDUCTION
GERISCHE.H
论文数:
0
引用数:
0
h-index:
0
机构:
Institute for Physical Chemistry and Electrochemistry, Technical University, Munich
GERISCHE.H
MINDT, W
论文数:
0
引用数:
0
h-index:
0
机构:
Institute for Physical Chemistry and Electrochemistry, Technical University, Munich
MINDT, W
[J].
ELECTROCHIMICA ACTA,
1968,
13
(06)
: 1329
-
&
[7]
POROSITY AND PORE-SIZE DISTRIBUTIONS OF POROUS SILICON LAYERS
HERINO, R
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE
HERINO, R
BOMCHIL, G
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE
BOMCHIL, G
BARLA, K
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE
BARLA, K
BERTRAND, C
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE
BERTRAND, C
GINOUX, JL
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE
GINOUX, JL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1987,
134
(8A)
: 1994
-
2000
[8]
ANODIC DISSOLUTION OF SILICON IN HYDROFLUORIC ACID SOLUTIONS
MEMMING, R
论文数:
0
引用数:
0
h-index:
0
MEMMING, R
SCHWANDT, G
论文数:
0
引用数:
0
h-index:
0
SCHWANDT, G
[J].
SURFACE SCIENCE,
1966,
4
(02)
: 109
-
&
[9]
POTENTIAL DISTRIBUTION AND FORMATION OF SURFACE STATES AT SILICON-ELECTROLYTE INTERFACE
MEMMING, R
论文数:
0
引用数:
0
h-index:
0
MEMMING, R
SCHWANDT, G
论文数:
0
引用数:
0
h-index:
0
SCHWANDT, G
[J].
SURFACE SCIENCE,
1966,
5
(01)
: 97
-
&
[10]
Memming R, 1983, COMPREHENSIVE TREATI, V7
←
1
2
→