AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON

被引：490

作者：

BEALE, MIJ

BENJAMIN, JD

UREN, MJ

CHEW, NG

CULLIS, AG

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(85)90029-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：622 / 636

页数：15

共 15 条

[1] A STUDY OF SILICON MBE ON POROUS SILICON SUBSTRATES
BEALE, MIJ
CHEW, NG
CULLIS, AG
GASSON, DB
HARDEMAN, RW
ROBBINS, DJ
YOUNG, IM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 732 - 735
[2] MICROSTRUCTURE AND FORMATION MECHANISM OF POROUS SILICON
BEALE, MIJ
CHEW, NG
UREN, MJ
CULLIS, AG
BENJAMIN, JD
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (01) : 86 - 88
[3] BEALE MIJ, UNPUB
[4] Bockris J.O.M., 1970, MODERN ELECTROCHEMIS
[5] POROUS SILICON FILMS - PREPARATION AND EXAMINATION WITH SURFACE AND OPTICAL METHODS
HARDEMAN, RW
BEALE, MIJ
GASSON, DB
KEEN, JM
PICKERING, C
ROBBINS, DJ
[J]. SURFACE SCIENCE, 1985, 152 (APR) : 1051 - 1062
[6] A NEW DIELECTRIC ISOLATION METHOD USING POROUS SILICON
IMAI, K
[J]. SOLID-STATE ELECTRONICS, 1981, 24 (02) : 159 - &
[7] IMAI K, 1981, P INT ELECTRON DEVIC, P376
[8] IMAI K, 1979, JPN J APPL PHYS, V18, P281
[9] A NEW SILICON-ON-INSULATOR STRUCTURE USING A SILICON MOLECULAR-BEAM EPITAXIAL-GROWTH ON POROUS SILICON
KONAKA, S
TABE, M
SAKAI, T
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (01) : 86 - 88
[10] KINETICS AND MECHANISM OF POROUS LAYER GROWTH DURING NORMAL-TYPE SILICON ANODIZATION IN HF SOLUTION
PARKHUTIK, VP
GLINENKO, LK
LABUNOV, VA
[J]. SURFACE TECHNOLOGY, 1983, 20 (03): : 265 - 277