A NEW SILICON-ON-INSULATOR STRUCTURE USING A SILICON MOLECULAR-BEAM EPITAXIAL-GROWTH ON POROUS SILICON

被引：49

作者：

KONAKA, S

TABE, M

SAKAI, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 01期

关键词：

D O I：

10.1063/1.93298

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：86 / 88

页数：3

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