EFFECT OF GROWTH TEMPERATURE ON SI MBE FILM

[1] ACCEPTOR DOPANTS IN SILICON MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3395 - 3399

[2] KINETICS OF INDUCTION PERIOD FOR NUCLEATION OF SILICON ON SI(111) SUBSTRATES AT U-H-V [J]. PHILOSOPHICAL MAGAZINE, 1970, 22 (175): : 135 - &

[3] SILICON CLEANING WITH HYDROGEN PEROXIDE SOLUTIONS - HIGH ENERGY ELECTRON DIFFRACTION AND AUGER ELECTRON SPECTROSCOPY STUDY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) : 772 - +

[4] CARBIDE CONTAMINATION OF SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (03) : 1208 - +

[5] GROWTH AND STRUCTURE OF SEMICONDUCTING THIN-FILMS [J]. REPORTS ON PROGRESS IN PHYSICS, 1974, 37 (03) : 363 - +

[6] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .3. NUCLEATION RATE MEASUREMENTS AND EFFECT OF OXYGEN ON INITIAL GROWTH BEHAVIOUR [J]. PHILOSOPHICAL MAGAZINE, 1967, 15 (138): : 1167 - &

[7] SILICON MOLECULAR-BEAM EPITAXY WITH SIMULTANEOUS ION IMPLANT DOPING [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1102 - 1110

[8] CHEMISORPTION OF CHLORINE ON SI(111) 7X7 AND 1X1 SURFACES [J]. PHYSICAL REVIEW B, 1977, 16 (08): : 3648 - 3651

[9] TABE M, 1980, SURF SCI, V99, pL403, DOI 10.1016/0039-6028(80)90544-0

[10] TOULOUKIAN YS, 1972, THERMOPHUSICAL PROPE, V9

[1] ACCEPTOR DOPANTS IN SILICON MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3395 - 3399

[2] KINETICS OF INDUCTION PERIOD FOR NUCLEATION OF SILICON ON SI(111) SUBSTRATES AT U-H-V [J]. PHILOSOPHICAL MAGAZINE, 1970, 22 (175): : 135 - &

[3] SILICON CLEANING WITH HYDROGEN PEROXIDE SOLUTIONS - HIGH ENERGY ELECTRON DIFFRACTION AND AUGER ELECTRON SPECTROSCOPY STUDY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) : 772 - +

[4] CARBIDE CONTAMINATION OF SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (03) : 1208 - +

[5] GROWTH AND STRUCTURE OF SEMICONDUCTING THIN-FILMS [J]. REPORTS ON PROGRESS IN PHYSICS, 1974, 37 (03) : 363 - +

[6] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .3. NUCLEATION RATE MEASUREMENTS AND EFFECT OF OXYGEN ON INITIAL GROWTH BEHAVIOUR [J]. PHILOSOPHICAL MAGAZINE, 1967, 15 (138): : 1167 - &

[7] SILICON MOLECULAR-BEAM EPITAXY WITH SIMULTANEOUS ION IMPLANT DOPING [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1102 - 1110

[8] CHEMISORPTION OF CHLORINE ON SI(111) 7X7 AND 1X1 SURFACES [J]. PHYSICAL REVIEW B, 1977, 16 (08): : 3648 - 3651

[9] TABE M, 1980, SURF SCI, V99, pL403, DOI 10.1016/0039-6028(80)90544-0

[10] TOULOUKIAN YS, 1972, THERMOPHUSICAL PROPE, V9