STRUCTURE OF POROUS SILICON LAYER AND HEAT-TREATMENT EFFECT

被引：107

作者：

UNAGAMI, T

SEKI, M

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 08期

关键词：

D O I：

10.1149/1.2131674

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：1339 / 1344

页数：6

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共 12 条

[1] FORMATION AND PROPERTIES OF POROUS SILICON FILM
ARITA, Y
SUNOHARA, Y
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) : 285 - 295
[2] INVESTIGATION OF CHEMICAL PROPERTIES OF STAIN FILMS ON SILICON BY MEANS OF INFRARED SPECTROSCOPY
BECKMANN, KH
[J]. SURFACE SCIENCE, 1965, 3 (04) : 314 - &
[3] STRUCTURAL FEATURES OF OXIDE COATINGS ON ALUMINIUM
KELLER, F
HUNTER, MS
ROBINSON, DL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1953, 100 (09) : 411 - 419
[4] KOLTUN MM, 1964, RUSS J PHYS CHEM, V38, P381
[5] SEKI M, UNPUBLISHED
[6] SUMITOMO Y, 1972, MAY EL SOC M HOUST
[7] TAKAOKA H, COMMUNICATION
[8] ETCH CHANNEL FORMATION DURING ANODIC DISSOLUTION OF N-TYPE SILICON IN AQUEOUS HYDROFLUORIC ACID
THEUNISSEN, MJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (03) : 351 - +
[9] ELECTROPOLISHING SILICON IN HYDROFLUORIC ACID SOLUTIONS
TURNER, DR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (07) : 402 - 408
[10] TURNER DR, 1960, SURFACE CHEM METALS, P285