POROUS SILICON FILMS - PREPARATION AND EXAMINATION WITH SURFACE AND OPTICAL METHODS

被引：48

作者：

HARDEMAN, RW

BEALE, MIJ

GASSON, DB

KEEN, JM

PICKERING, C

ROBBINS, DJ

机构：

来源：

SURFACE SCIENCE | 1985年 / 152卷 / APR期

关键词：

D O I：

10.1016/0039-6028(85)90520-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：1051 / 1062

页数：12

相关论文

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[8] A NEW SILICON-ON-INSULATOR STRUCTURE USING A SILICON MOLECULAR-BEAM EPITAXIAL-GROWTH ON POROUS SILICON
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[10] STRUCTURE OF POROUS SILICON LAYER AND HEAT-TREATMENT EFFECT
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