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ISOLATION OF SILICON FILM GROWN ON POROUS SILICON LAYER
被引:8
作者
:
TAKAI, H
论文数:
0
引用数:
0
h-index:
0
TAKAI, H
ITOH, T
论文数:
0
引用数:
0
h-index:
0
ITOH, T
机构
:
来源
:
JOURNAL OF ELECTRONIC MATERIALS
|
1983年
/ 12卷
/ 06期
关键词
:
D O I
:
10.1007/BF02654968
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:973 / 982
页数:10
相关论文
共 7 条
[1]
FORMATION AND OXIDATION OF POROUS SILICON BY ANODIC REACTION
ARITA, Y
论文数:
0
引用数:
0
h-index:
0
ARITA, Y
[J].
JOURNAL OF CRYSTAL GROWTH,
1978,
45
(01)
: 383
-
392
[2]
A NEW DIELECTRIC ISOLATION METHOD USING POROUS SILICON
IMAI, K
论文数:
0
引用数:
0
h-index:
0
IMAI, K
[J].
SOLID-STATE ELECTRONICS,
1981,
24
(02)
: 159
-
&
[3]
CHARACTERISTICS OF SI FILMS GROWN ON ION PROCESSED SAPPHIRE SUBSTRATES BY PLASMA DISSOCIATION OF SILANE
ITOH, T
论文数:
0
引用数:
0
h-index:
0
ITOH, T
TAKAI, H
论文数:
0
引用数:
0
h-index:
0
TAKAI, H
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1983,
22
(04):
: 597
-
602
[4]
CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON
IZUMI, K
论文数:
0
引用数:
0
h-index:
0
IZUMI, K
DOKEN, M
论文数:
0
引用数:
0
h-index:
0
DOKEN, M
ARIYOSHI, H
论文数:
0
引用数:
0
h-index:
0
ARIYOSHI, H
[J].
ELECTRONICS LETTERS,
1978,
14
(18)
: 593
-
594
[5]
STRUCTURE OF POROUS SILICON LAYER AND HEAT-TREATMENT EFFECT
UNAGAMI, T
论文数:
0
引用数:
0
h-index:
0
UNAGAMI, T
SEKI, M
论文数:
0
引用数:
0
h-index:
0
SEKI, M
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(08)
: 1339
-
1344
[6]
FORMATION MECHANISM OF POROUS SILICON LAYER BY ANODIZATION IN HF SOLUTION
UNAGAMI, T
论文数:
0
引用数:
0
h-index:
0
UNAGAMI, T
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(02)
: 476
-
483
[7]
OXIDATION OF POROUS SILICON AND PROPERTIES OF ITS OXIDE FILM
UNAGAMI, T
论文数:
0
引用数:
0
h-index:
0
UNAGAMI, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(02)
: 231
-
241
←
1
→
共 7 条
[1]
FORMATION AND OXIDATION OF POROUS SILICON BY ANODIC REACTION
ARITA, Y
论文数:
0
引用数:
0
h-index:
0
ARITA, Y
[J].
JOURNAL OF CRYSTAL GROWTH,
1978,
45
(01)
: 383
-
392
[2]
A NEW DIELECTRIC ISOLATION METHOD USING POROUS SILICON
IMAI, K
论文数:
0
引用数:
0
h-index:
0
IMAI, K
[J].
SOLID-STATE ELECTRONICS,
1981,
24
(02)
: 159
-
&
[3]
CHARACTERISTICS OF SI FILMS GROWN ON ION PROCESSED SAPPHIRE SUBSTRATES BY PLASMA DISSOCIATION OF SILANE
ITOH, T
论文数:
0
引用数:
0
h-index:
0
ITOH, T
TAKAI, H
论文数:
0
引用数:
0
h-index:
0
TAKAI, H
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1983,
22
(04):
: 597
-
602
[4]
CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON
IZUMI, K
论文数:
0
引用数:
0
h-index:
0
IZUMI, K
DOKEN, M
论文数:
0
引用数:
0
h-index:
0
DOKEN, M
ARIYOSHI, H
论文数:
0
引用数:
0
h-index:
0
ARIYOSHI, H
[J].
ELECTRONICS LETTERS,
1978,
14
(18)
: 593
-
594
[5]
STRUCTURE OF POROUS SILICON LAYER AND HEAT-TREATMENT EFFECT
UNAGAMI, T
论文数:
0
引用数:
0
h-index:
0
UNAGAMI, T
SEKI, M
论文数:
0
引用数:
0
h-index:
0
SEKI, M
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(08)
: 1339
-
1344
[6]
FORMATION MECHANISM OF POROUS SILICON LAYER BY ANODIZATION IN HF SOLUTION
UNAGAMI, T
论文数:
0
引用数:
0
h-index:
0
UNAGAMI, T
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(02)
: 476
-
483
[7]
OXIDATION OF POROUS SILICON AND PROPERTIES OF ITS OXIDE FILM
UNAGAMI, T
论文数:
0
引用数:
0
h-index:
0
UNAGAMI, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(02)
: 231
-
241
←
1
→