FORMATION AND OXIDATION OF POROUS SILICON BY ANODIC REACTION

[1] N+-IPOS SCHEME AND ITS APPLICATIONS TO ICS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) : 756 - 757

[2] FORMATION AND PROPERTIES OF POROUS SILICON FILM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) : 285 - 295

[3] THERMAL-BEHAVIOR OF POROUS SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (09) : 1655 - 1664

[4] ARITA Y, 1975, SSD7518 JECE TECH GR

[5] ARITA Y, 1976, SSD7652 JECE TECH GR

[6] ANODIC DISSOLUTION OF N+ SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (03) : 437 - &

[7] ANODIC DISSOLUTION OF SILICON IN HYDROFLUORIC ACID SOLUTIONS [J]. SURFACE SCIENCE, 1966, 4 (02) : 109 - &

[8] Myamlin V.A., 1967, ELECTROCHEMISTRY SEM

[9] NAKAJIMA S, 1975, SUPPL J JAPAN SOC AP, V44, P30

[10] ETCH CHANNEL FORMATION DURING ANODIC DISSOLUTION OF N-TYPE SILICON IN AQUEOUS HYDROFLUORIC ACID [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (03) : 351 - +

[1] N+-IPOS SCHEME AND ITS APPLICATIONS TO ICS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) : 756 - 757

[2] FORMATION AND PROPERTIES OF POROUS SILICON FILM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) : 285 - 295

[3] THERMAL-BEHAVIOR OF POROUS SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (09) : 1655 - 1664

[4] ARITA Y, 1975, SSD7518 JECE TECH GR

[5] ARITA Y, 1976, SSD7652 JECE TECH GR

[6] ANODIC DISSOLUTION OF N+ SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (03) : 437 - &

[7] ANODIC DISSOLUTION OF SILICON IN HYDROFLUORIC ACID SOLUTIONS [J]. SURFACE SCIENCE, 1966, 4 (02) : 109 - &

[8] Myamlin V.A., 1967, ELECTROCHEMISTRY SEM

[9] NAKAJIMA S, 1975, SUPPL J JAPAN SOC AP, V44, P30

[10] ETCH CHANNEL FORMATION DURING ANODIC DISSOLUTION OF N-TYPE SILICON IN AQUEOUS HYDROFLUORIC ACID [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (03) : 351 - +