OXIDATION OF POROUS SILICON AND PROPERTIES OF ITS OXIDE FILM

[1] APPELS JA, 1971, PHILIPS RES REP, V26, P157

[2] THERMAL-BEHAVIOR OF POROUS SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (09) : 1655 - 1664

[3] INVESTIGATION OF CHEMICAL PROPERTIES OF STAIN FILMS ON SILICON BY MEANS OF INFRARED SPECTROSCOPY [J]. SURFACE SCIENCE, 1965, 3 (04) : 314 - &

[4] INVESTIGATION OF 1800-1400 CM-1 REGION OF INFRA-RED SPECTRUM OF AEROSIL SILICAS [J]. TRANSACTIONS OF THE FARADAY SOCIETY, 1966, 62 (520P): : 795 - +

[5] NAKAJIMA S, 1975, J JAPAN SOC APPL PHY, V44, P303

[6] PELTZER D, 1971, ELECTRONICS 0301, P52

[7] ELECTROPOLISHING SILICON IN HYDROFLUORIC ACID SOLUTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (07) : 402 - 408

[8] STRUCTURE OF POROUS SILICON LAYER AND HEAT-TREATMENT EFFECT [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) : 1339 - 1344

[9] STUDY OF INJECTION TYPE IPOS SCHEME [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (09) : 1635 - 1640

[10] UNAGAMI T, UNPUBLISHED

[1] APPELS JA, 1971, PHILIPS RES REP, V26, P157

[2] THERMAL-BEHAVIOR OF POROUS SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (09) : 1655 - 1664

[3] INVESTIGATION OF CHEMICAL PROPERTIES OF STAIN FILMS ON SILICON BY MEANS OF INFRARED SPECTROSCOPY [J]. SURFACE SCIENCE, 1965, 3 (04) : 314 - &

[4] INVESTIGATION OF 1800-1400 CM-1 REGION OF INFRA-RED SPECTRUM OF AEROSIL SILICAS [J]. TRANSACTIONS OF THE FARADAY SOCIETY, 1966, 62 (520P): : 795 - +

[5] NAKAJIMA S, 1975, J JAPAN SOC APPL PHY, V44, P303

[6] PELTZER D, 1971, ELECTRONICS 0301, P52

[7] ELECTROPOLISHING SILICON IN HYDROFLUORIC ACID SOLUTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (07) : 402 - 408

[8] STRUCTURE OF POROUS SILICON LAYER AND HEAT-TREATMENT EFFECT [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) : 1339 - 1344

[9] STUDY OF INJECTION TYPE IPOS SCHEME [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (09) : 1635 - 1640

[10] UNAGAMI T, UNPUBLISHED