A STUDY OF SILICON MBE ON POROUS SILICON SUBSTRATES

被引：17

作者：

BEALE, MIJ

CHEW, NG

CULLIS, AG

GASSON, DB

HARDEMAN, RW

ROBBINS, DJ

YOUNG, IM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583128

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：732 / 735

页数：4

共 11 条

[1] X-RAY DOUBLE-CRYSTAL DIFFRACTOMETRY OF GA1-XALXAS EPITAXIAL LAYERS [J].

BARTELS, WJ ;

NIJMAN, W .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :518-525

[2]

BAUMGART H, 1983, I PHYS C SER, V67, P223

[3]

BEALE MIJ, UNPUB APPL PHYS LETT

[4]

HARDEMAN RW, UNPUB SURF SCI

[5]

JONES GR, 1981, I PHYS C SER, V60, P265

[6] A NEW SILICON-ON-INSULATOR STRUCTURE USING A SILICON MOLECULAR-BEAM EPITAXIAL-GROWTH ON POROUS SILICON [J].

KONAKA, S ;

TABE, M ;

SAKAI, T .

APPLIED PHYSICS LETTERS, 1982, 41 (01) :86-88

[7]

LIHL R, 1979, J MICROSC, V118, P89

[8]

ROBBINS D, UNPUB

[9]

ROBBINS DL, UNPUB J PHYS CHEM

[10] ISOLATION OF SILICON FILM GROWN ON POROUS SILICON LAYER [J].

TAKAI, H ;

ITOH, T .

JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (06) :973-982

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