NOISE SUPPRESSION IN SEMICONDUCTOR P-I-N JUNCTIONS - TRANSITION FROM MACROSCOPIC SQUEEZING TO MESOSCOPIC COULOMB BLOCKADE OF ELECTRON-EMISSION PROCESSES

We analyze noise suppression properties of a constant-current driven p-i-n heterojunction. It is shown that the junction capacitance and temperature determine the minimum measurement time required for obtaining sub-Poissonian electron injection. As the capacitance of the junction is reduced, the noise spectrum develops a ''regulated single electron emission peak'' at the single electron charging frequency, indicating regulation of the individual thermionic emission events and therefore a transition from macroscopic squeezing to Coulomb blockade regime.