PHYSICAL ORIGIN OF THE NEGATIVE OUTPUT RESISTANCE OF HETEROJUNCTION BIPOLAR-TRANSISTORS

被引:8
作者
DAGLI, N
机构
[1] Univ of California, Santa Barbara,, CA, USA, Univ of California, Santa Barbara, CA, USA
关键词
D O I
10.1109/55.2059
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
4
引用
收藏
页码:113 / 115
页数:3
相关论文
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[2]  
CHANG MF, 1987, 45TH DEV RES C SANT
[3]   HIGH-FREQUENCY CHARACTERISTICS OF INVERTED-MODE HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
DAGLI, N ;
LEE, W ;
PRASAD, S ;
FONSTAD, CG .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (10) :472-474
[4]  
VANDERZIEL A, 1976, SOLID STATE PHYSICAL