HIGH-FREQUENCY CHARACTERISTICS OF INVERTED-MODE HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：10

作者：

DAGLI, N

LEE, W

PRASAD, S

FONSTAD, CG

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

[2] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 10期

关键词：

D O I：

10.1109/EDL.1987.26698

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：472 / 474

页数：3

相关论文

共 5 条

[1] ABRAHAM RP, 1960, IRE T ELECTRON DEV, V7, P59
[2] CONSIDERATION OF THE RELATIVE FREQUENCY PERFORMANCE POTENTIAL OF INVERTED HETEROJUNCTION N-P-N TRANSISTORS
FONSTAD, CG
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) : 99 - 100
[3] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS
KROEMER, H
[J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25
[4] HIGH-FREQUENCY LIMITS OF MILLIMETER-WAVE TRANSISTORS
STEER, MB
TREW, RJ
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) : 640 - 642
[5] JUNCTION TRANSISTOR SHORT-CIRCUIT CURRENT GAIN AND PHASE DETERMINATION
THOMAS, DE
MOLL, JL
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1177 - 1184