HIGH-FREQUENCY LIMITS OF MILLIMETER-WAVE TRANSISTORS

[1] BOSCH BG, 1975, GUNN EFFECT ELECTRON, P128

[2] 18.5-DB GAIN AT 18-GHZ WITH A GAAS PERMEABLE BASE TRANSISTOR [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) : 456 - 458

[3] MILLIMETER-WAVE LOW-NOISE HIGH ELECTRON-MOBILITY TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) : 531 - 533

[4] HIGH-FREQUENCY LIMITATIONS OF ABRUPT-JUNCTION FETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (09) : 779 - 792

[5] FENG M, 1984, APPL PHYS LETT, V44, P231, DOI 10.1063/1.94681

[6] Ha T T, 1981, SOLID STATE MICROWAV

[7] KIM B, 1985, JUL P IEEE CORN C AD, P181

[8] MICROWAVE FIELD-EFFECT TRANSISTORS 1976 [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) : 279 - 330

[9] MAKI DW, 1984, 1984 IEEE MICR MILL, P62

[10] Mason S.J., 1954, IRE T CIRCUIT THEORY, VCT-1, P20, DOI DOI 10.1109/TCT.1954.1083579

[1] BOSCH BG, 1975, GUNN EFFECT ELECTRON, P128

[2] 18.5-DB GAIN AT 18-GHZ WITH A GAAS PERMEABLE BASE TRANSISTOR [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) : 456 - 458

[3] MILLIMETER-WAVE LOW-NOISE HIGH ELECTRON-MOBILITY TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) : 531 - 533

[4] HIGH-FREQUENCY LIMITATIONS OF ABRUPT-JUNCTION FETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (09) : 779 - 792

[5] FENG M, 1984, APPL PHYS LETT, V44, P231, DOI 10.1063/1.94681

[6] Ha T T, 1981, SOLID STATE MICROWAV

[7] KIM B, 1985, JUL P IEEE CORN C AD, P181

[8] MICROWAVE FIELD-EFFECT TRANSISTORS 1976 [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) : 279 - 330

[9] MAKI DW, 1984, 1984 IEEE MICR MILL, P62

[10] Mason S.J., 1954, IRE T CIRCUIT THEORY, VCT-1, P20, DOI DOI 10.1109/TCT.1954.1083579