MILLIMETER-WAVE LOW-NOISE HIGH ELECTRON-MOBILITY TRANSISTORS

[1] BERENZ JJ, 1984, JUN IEEE MTTS, P83

[2] ELECTRON-BEAM FABRICATION OF GAAS LOW-NOISE MESFETS USING A NEW TRILAYER RESIST TECHNIQUE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) : 1042 - 1046

[3] CHAO PC, 1985, 43RD ANN DEV RES C B

[4] CIRILLO NC, 1985, 43RD ANN DEV RES C B

[5] A HIGH ASPECT RATIO DESIGN APPROACH TO MILLIMETER-WAVE HEMT STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (01) : 11 - 17

[6] DELESCLUSE P, 1985, 21TH WOCSMMAD

[7] LOW-NOISE HIGH ELECTRON-MOBILITY TRANSISTORS FOR MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (02) : 81 - 82

[8] HIKOSAKA K, 1985, 43RD ANN DEV RES C B

[9] MICROWAVE PERFORMANCE OF 0.25-MU-M GATE LENGTH HIGH ELECTRON-MOBILITY TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (03) : 142 - 145

[10] OHATA K, 1984, 15TH P C SOL STAT DE, P111

[1] BERENZ JJ, 1984, JUN IEEE MTTS, P83

[2] ELECTRON-BEAM FABRICATION OF GAAS LOW-NOISE MESFETS USING A NEW TRILAYER RESIST TECHNIQUE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) : 1042 - 1046

[3] CHAO PC, 1985, 43RD ANN DEV RES C B

[4] CIRILLO NC, 1985, 43RD ANN DEV RES C B

[5] A HIGH ASPECT RATIO DESIGN APPROACH TO MILLIMETER-WAVE HEMT STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (01) : 11 - 17

[6] DELESCLUSE P, 1985, 21TH WOCSMMAD

[7] LOW-NOISE HIGH ELECTRON-MOBILITY TRANSISTORS FOR MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (02) : 81 - 82

[8] HIKOSAKA K, 1985, 43RD ANN DEV RES C B

[9] MICROWAVE PERFORMANCE OF 0.25-MU-M GATE LENGTH HIGH ELECTRON-MOBILITY TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (03) : 142 - 145

[10] OHATA K, 1984, 15TH P C SOL STAT DE, P111