LOW-FREQUENCY, LOW-TEMPERATURE DIELECTRIC BEHAVIOR OF NARA-TYPE GERMANIUM BELOW THE INSULATOR-METAL TRANSITION

被引：33

作者：

CASTNER, TG

LEE, NK

TAN, HS

MOBERLY, L

SYMKO, O

机构：

来源：

JOURNAL OF LOW TEMPERATURE PHYSICS | 1980年 / 38卷 / 3-4期

关键词：

D O I：

10.1007/BF00114337

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：447 / 473

页数：27

共 45 条

[1] SEMICONDUCTOR-TO-METAL TRANSITION IN N-TYPE GROUP 4 SEMICONDUCTORS [J].

ALEXANDER, MN ;

HOLCOMB, DF .

REVIEWS OF MODERN PHYSICS, 1968, 40 (04) :815-+

[2] ELECTRICAL-CONDUCTION IN HEAVILY DOPED GERMANIUM [J].

ALLEN, FR ;

ADKINS, CJ .

PHILOSOPHICAL MAGAZINE, 1972, 26 (04) :1027-&

[3] MICROWAVE OBSERVATION OF THE COLLISION FREQUENCY OF ELECTRONS IN GERMANIUM [J].

BENEDICT, TS ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1953, 89 (05) :1152-1153

[4] METAL TO NONMETAL TRANSITIONS IN DOPED GERMANIUM AND SILICON [J].

BERGGREN, KF .

PHILOSOPHICAL MAGAZINE, 1973, 27 (05) :1027-1040

[5] OBSERVATION OF A DONOR EXCITON BAND IN SILICON [J].

CAPIZZI, M ;

THOMAS, GA ;

DEROSA, F ;

BHATT, RN ;

RICE, TM .

SOLID STATE COMMUNICATIONS, 1979, 31 (09) :611-616

[6] DIELECTRIC CONSTANT OF GERMANIUM AND SILICON AS A FUNCTION OF VOLUME [J].

CARDONA, M ;

PAUL, W ;

BROOKS, H .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :204-206

[7]

CASTELLAN GW, 1951, SEMICONDUCTING MATER

[8]

CASTNER TG, 1979, SOLID STATE COMMUN, V32, P121, DOI 10.1016/0038-1098(79)91071-8

[9] DIELECTRIC ANOMALY AND METAL-INSULATOR TRANSITION IN N-TYPE SILICON [J].

CASTNER, TG ;

LEE, NK ;

CIELOSZYK, GS ;

SALINGER, GL .

PHYSICAL REVIEW LETTERS, 1975, 34 (26) :1627-1630

[10]

CASTNER TG, UNPUBLISHED

← 1 2 3 4 5 →