ANTIMONY-BASED STRAINED-LAYER 2-2.5-MU-M QUANTUM-WELL LASERS

被引：10

作者：

GHITI, A

OREILLY, EP

机构：

[1] Dept. of Phys., Surrey Univ., Guildford

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 08期

关键词：

D O I：

10.1088/0268-1242/8/8/028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present calculations which show that compressive or tensile strain introduced into the well material of InGaAsSb/AlGaSb quantum well lasers reduces the threshold current density compared with double heterostructure and lattice-matched lasers. The operating wavelength can be close to 2.55 mum, the region of lowest attenuation in fluoride glass fibres.

引用

页码：1655 / 1661

页数：7

共 32 条

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