MOVPE GROWTH OF GAINASSB

被引：95

作者：

CHERNG, MJ ^{[1
]}

JEN, HR ^{[1
]}

LARSEN, CA ^{[1
]}

STRINGFELLOW, GB ^{[1
]}

LUNDT, H ^{[1
]}

TAYLOR, PC ^{[1
]}

机构：

[1] UNIV UTAH,DEPT PHYS,SALT LAKE CITY,UT 84112

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90331-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：408 / 417

页数：10

共 26 条

[1] GAAS1-XSBX GROWTH BY OMVPE
CHERNG, MJ
COHEN, RM
STRINGFELLOW, GB
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (05) : 799 - 813
[2] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS0.5SB0.5
CHERNG, MJ
STRINGFELLOW, GG
COHEN, RM
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (07) : 677 - 679
[3] OMVPE GROWTH OF THE METASTABLE-III/V ALLOY GAAS0.5SB0.5
CHERNG, MJ
CHERNG, YT
JEN, HR
HARPER, P
COHEN, RM
STRINGFELLOW, GB
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (02) : 79 - 85
[4] GAINASSB METASTABLE ALLOYS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
CHERNG, MJ
STRINGFELLOW, GB
KISKER, DW
SRIVASTAVA, AK
ZYSKIND, JL
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (06) : 419 - 421
[5] LIQUID-PHASE EPITAXIAL GA1-XINXASYSB1-Y LATTICE-MATCHED TO (100) GASB OVER THE 1.71-MU-M 2.33-MU-M WAVELENGTH RANGE
DEWINTER, JC
POLLACK, MA
SRIVASTAVA, AK
ZYSKIND, JL
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (06) : 729 - 747
[6] STUDY OF PHASE-EQUILIBRIA AND HETEROJUNCTIONS IN GA-IN-AS-SB QUATERNARY SYSTEM
DOLGINOV, LM
ELISEEV, PG
LAPSHIN, AN
MILVIDSKII, MG
[J]. KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1978, 13 (06): : 631 - 638
[7] ORGANOMETALLIC VPE GROWTH OF INAS
FUKUI, T
HORIKOSHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (11) : 2157 - 2158
[8] Jen H. H., UNPUB
[9] LIQUID-PHASE EPITAXY OF GA1-YINYASXSB1-X QUATERNARY ALLOYS ON GASB
KANO, H
MIYAZAWA, S
SUGIYAMA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (11) : 2183 - 2184
[10] KOBAYASHI N, 1979, JPN J APPL PHYS, V18, P2183

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