ORGANOMETALLIC VPE GROWTH OF INAS

被引：10

作者：

FUKUI, T

HORIKOSHI, Y

机构：

[1] Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1979年 / 18卷 / 11期

关键词：

D O I：

10.1143/JJAP.18.2157

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

收藏

页码：2157 / 2158

页数：2

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[1] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .5. FORMATION OF IN-GROUP V COMPOUNDS AND ALLOYS
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[2] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .3. STUDIES OF EPITAXIAL III-V ALUMINUM COMPOUND FORMATION USING TRIMETHYLALUMINUM
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[3] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS
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[4] SUBMICRON GAAS EPITAXIAL LAYER FROM DIETHYLGALLIUMCHLORIDE AND ARSINE
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : 1227 - 1231
[5] PROPERTIES OF EPITAXIAL GAAS LAYERS FROM A TRIETHYL GALLIUM AND ARSINE SYSTEM
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) : 1108 - 1112
[6] ORGANOMETALLIC VPE GROWTH OF A1XGA1-XAS
STRINGFELLOW, GB
HALL, HT
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (03) : 201 - 226