USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .3. STUDIES OF EPITAXIAL III-V ALUMINUM COMPOUND FORMATION USING TRIMETHYLALUMINUM

被引：115

作者：

MANASEVIT, HM

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 04期

关键词：

D O I：

10.1149/1.2408131

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：647 / +

页数：1

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[1] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS
MANASEVIT, HM
SIMPSON, WI
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1725 - +
[2] SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES
MANASEVIT, HM
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (04) : 156 - +
[3] EPITAXIAL GALLIUM ARSENIDE FROM TRIMETHYL GALLIUM AND ARSINE
RAICHOUDBURY, P
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1745 - +
[4] VAPOR GROWTH OF AIP SINGLE CRYSTALS
REID, FJ
MILLER, SE
GOERING, HL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (05) : 467 - &
[5] VAPOR PHASE GROWTH AND PROPERTIES OF ALUMINUM PHOSPHIDE
RICHMAN, D
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) : 945 - &
[6] GROWTH OF SINGLE CRYSTAL GAP FROM ORGANOMETALLIC SOURCES
THOMAS, RW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (10) : 1449 - &