SUBMICRON GAAS EPITAXIAL LAYER FROM DIETHYLGALLIUMCHLORIDE AND ARSINE

被引：17

作者：

NAKAYAMA, Y ^{[1
]}

OHKAWA, S ^{[1
]}

HASHIMOTO, H ^{[1
]}

ISHIKAWA, H ^{[1
]}

机构：

[1] FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 08期

关键词：

D O I：

10.1149/1.2133040

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1227 / 1231

页数：5

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