GAAS1-XSBX GROWTH BY OMVPE

被引:58
作者
CHERNG, MJ [1 ]
COHEN, RM [1 ]
STRINGFELLOW, GB [1 ]
机构
[1] UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
关键词
D O I
10.1007/BF02657927
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:799 / 813
页数:15
相关论文
共 21 条
[1]   KINETICS OF THE PYROLYSIS OF TRIMETHYLARSINE, TRISTRIFLUOROMETHYLARSINE, AND RELATED COMPOUNDS [J].
AYSCOUGH, PB ;
EMELEUS, HJ .
JOURNAL OF THE CHEMICAL SOCIETY, 1954, (OCT) :3381-3388
[2]   GROWTH OF GAAS(1-X)SBX BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
BEDAIR, SM ;
TIMMONS, ML ;
CHIANG, PK ;
SIMPSON, L ;
HAUSER, JR .
JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (06) :959-972
[3]  
BEDAIR SM, 1981, I PHYS C SER, V56, P403
[4]   THE USE OF A METALORGANIC COMPOUND FOR THE GROWTH OF INP-EPITAXIAL LAYERS [J].
BENZ, KW ;
RENZ, H ;
WEIDLEIN, J ;
PILKUHN, MH .
JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) :185-192
[5]   GROWTH OF INP-EPITAXIAL LAYERS - A COMPARISON BETWEEN MOVPE-TECHNIQUES AND VPE-TECHNIQUES [J].
BENZ, KW ;
HASPEKLO, H ;
BOSCH, R .
JOURNAL DE PHYSIQUE, 1982, 43 (NC-5) :393-399
[6]  
CHERNG MJ, 1984, APPL PHYS LETT, V44, P550
[7]  
CLOUGH RB, 1969, T METALL SOC AIME, V245, P583
[8]   ORGANOMETALLIC VPE GROWTH OF GAAS1-YSBY USING TRIMETHYL ANTIMONY AND GA1-XINXAS USING TRIMETHYL ARSENIC [J].
COOPER, CB ;
LUDOWISE, MJ ;
AEBI, V ;
MOON, RL .
JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (02) :299-309
[9]  
FRAAS L, 1981, 16TH P IEEE PHOT SPE, P655
[10]   THE GAALASSB QUATERNARY AND GAALSB TERNARY ALLOYS AND THEIR APPLICATION TO INFRARED DETECTORS [J].
LAW, HD ;
CHIN, R ;
NAKANO, K ;
MILANO, RA .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :275-283