GROWTH OF INP-EPITAXIAL LAYERS - A COMPARISON BETWEEN MOVPE-TECHNIQUES AND VPE-TECHNIQUES

被引：9

作者：

BENZ, KW ^{[1
]}

HASPEKLO, H ^{[1
]}

BOSCH, R ^{[1
]}

机构：

[1] FRAUNHOFER INST,INST ANGEW FESTKORPERPHYS,D-7800 FREIBURG,FED REP GER

来源：

JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC-5期

关键词：

D O I：

10.1051/jphyscol:1982544

中图分类号：

学科分类号：

摘要：

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页码：393 / 399

页数：7

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[1] THE USE OF A METALORGANIC COMPOUND FOR THE GROWTH OF INP-EPITAXIAL LAYERS
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) : 185 - 192
[2] CARDWELL MJ, 1980 P NATO SPONS IN, P285
[3] STUDY OF MOLAR FRACTION EFFECT IN PCI3-IN-H2 SYSTEM
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[4] INP EPITAXY WITH A NEW METALORGANIC COMPOUND
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[J]. ELECTRONICS LETTERS, 1980, 16 (06) : 228 - 228
[5] ORGANOMETALLIC VPE GROWTH OF A1XGA1-XAS
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (03) : 201 - 226