GROWTH OF GAAS(1-X)SBX BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：29

作者：

BEDAIR, SM ^{[1
]}

TIMMONS, ML ^{[1
]}

CHIANG, PK ^{[1
]}

SIMPSON, L ^{[1
]}

HAUSER, JR ^{[1
]}

机构：

[1] RES TRIANGLE INST, RES TRIANGLE PK, NC 27709 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1983年 / 12卷 / 06期

关键词：

D O I：

10.1007/BF02654967

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：959 / 972

页数：14

共 14 条

[1] ORGANOMETALLIC VPE GROWTH OF GAAS1-YSBY USING TRIMETHYL ANTIMONY AND GA1-XINXAS USING TRIMETHYL ARSENIC
COOPER, CB
LUDOWISE, MJ
AEBI, V
MOON, RL
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (02) : 299 - 309
[2] THE ORGANO-METALLIC VPE GROWTH OF GASB AND GAAS1-XSBX USING TRIMETHYLANTIMONY
COOPER, CB
SAXENA, RR
LUDOWISE, MJ
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (06) : 1001 - 1010
[3] FRAAS LM, 1982, 16TH P IEEE PHOT SPE
[4] ORGANOMETALLIC VPE GROWTH OF INAS1-XSBX ON INAS
FUKUI, T
HORIKOSHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) : L53 - L56
[5] MISCIBILITY GAP IN GAASYSB1-Y SYSTEM
GRATTON, MF
GOODCHILD, RG
JURAVEL, LY
WOOLLEY, JC
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (01) : 25 - 29
[6] HESS KL, 1982, ELETRON MAT C
[7] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS
MANASEVIT, HM
SIMPSON, WI
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1725 - +
[8] GROWTH AND PROPERTIES OF LIQUID-PHASE EPITAXIAL GAAS1-XSBX
NAHORY, RE
POLLACK, MA
DEWINTER, JC
WILLIAMS, KM
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) : 1607 - 1614
[9] EFFICIENT GAAS1-XSBX-ALYGA1-YAS1-XSBX DOUBLE-HETEROSTRUCTURE LEDS IN 1-MUM WAVELENGTH REGION
NAHORY, RE
POLLACK, MA
BEEBE, ED
DEWINTER, JC
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (06) : 356 - 357
[10] THRESHOLD CHARACTERISTICS AND EXTENDED WAVELENGTH OPERATION OF GAAS1-X'SBX'-ALYGA1-YAS1-XSBX DOUBLE-HETEROSTRUCTURE LASERS
NAHORY, RE
POLLACK, MA
ABROKWAH, JK
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) : 3988 - 3990

← 1 2 →