ORGANOMETALLIC VPE GROWTH OF INAS1-XSBX ON INAS

[1] ORGANOMETALLIC VPE GROWTH OF INAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (11) : 2157 - 2158

[2] X-RAY STUDY OF ALXGA1-XAS EPITAXIAL LAYERS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 31 (01): : 255 - 262

[3] VAPOR-PRESSURE DEPENDENCE OF RELATIVE COMPOSITION OF 3-5 MIXED CRYSTALS IN VAPOR-PHASE EPITAXY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (03) : 423 - 425

[4] LATTICE MISMATCH AT INTERFACE IN GAP-GAP AND GAA1AS-GAAS EPITAXIAL-GROWTH [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) : 266 - 271

[5] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .3. STUDIES OF EPITAXIAL III-V ALUMINUM COMPOUND FORMATION USING TRIMETHYLALUMINUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 647 - +

[6] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1725 - +

[7] PANISH MB, 1972, PROGR SOLID STATE CH, V7

[8] WILLIAM MC, 1968, CAN J PHYS, V46, P1207

[9] PREPARATION OF INAS-INSB ALLOYS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (10) : 1142 - 1145

[10] 1971, HDB ELECTRONIC MATER, V2

[1] ORGANOMETALLIC VPE GROWTH OF INAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (11) : 2157 - 2158

[2] X-RAY STUDY OF ALXGA1-XAS EPITAXIAL LAYERS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 31 (01): : 255 - 262

[3] VAPOR-PRESSURE DEPENDENCE OF RELATIVE COMPOSITION OF 3-5 MIXED CRYSTALS IN VAPOR-PHASE EPITAXY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (03) : 423 - 425

[4] LATTICE MISMATCH AT INTERFACE IN GAP-GAP AND GAA1AS-GAAS EPITAXIAL-GROWTH [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) : 266 - 271

[5] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .3. STUDIES OF EPITAXIAL III-V ALUMINUM COMPOUND FORMATION USING TRIMETHYLALUMINUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 647 - +

[6] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1725 - +

[7] PANISH MB, 1972, PROGR SOLID STATE CH, V7

[8] WILLIAM MC, 1968, CAN J PHYS, V46, P1207

[9] PREPARATION OF INAS-INSB ALLOYS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (10) : 1142 - 1145

[10] 1971, HDB ELECTRONIC MATER, V2