NOVEL MAGTNETORESISTANCE BEHAVIOR IN SINGLE TRILAYER SPIN VALVES

被引：24

作者：

PATEL, M

FUJIMOTO, T

GU, E

DABOO, C

BLAND, JAC

机构：

[1] Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, Madingley Road

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 10期

关键词：

D O I：

10.1063/1.356937

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single trilayer spin valves consisting of uncapped FeNi(60 angstrom)/Cu(60 angstrom)/Co(40 angstrom) have been grown using ultrahigh vacuum (UHV) electron beam evaporation methods. Room temperature magnetoresistance (MR) measurements exhibit well defined plateaux corresponding to the full antiparallel alignment of the FeNi and Co magnetizations. This sharp switching behavior and precisely defined antiferrimagnetic state is in contrast with the corresponding behavior reported for FeNi/Cu/Co multilayers.

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页码：6528 / 6530

页数：3

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