COBALT DISILICIDE EPITAXIAL-GROWTH ON THE SILICON (111) SURFACE

被引：117

作者：

PIRRI, C ^{[1
]}

PERUCHETTI, JC ^{[1
]}

GEWINNER, G ^{[1
]}

DERRIEN, J ^{[1
]}

机构：

[1] CNRS,ETUD PROPRIETES ELECTR SOLIDES LAB,F-38042 GRENOBLE,FRANCE

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.29.3391

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3391 / 3397

页数：7

共 38 条

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[6] BUCKLING RECONSTRUCTION ON LASER-ANNEALED SI(111) SURFACES
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[7] FORMATION AND STRUCTURE OF EPITAXIAL NISI2 AND COSI2
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[8] COMIN F, 1983, UNPUB 5TH INT C SOL
[9] A PHOTOEMISSION INVESTIGATION OF THE SI-AU INTERFACE AND ITS BEHAVIOR UNDER OXYGEN EXPOSURE
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[J]. SURFACE SCIENCE, 1983, 124 (2-3) : L35 - L40
[10] AU ON SI(111) - A STUDY OF THE INTERFACE UNDER UHV CONDITIONS AND ITS MODIFICATIONS IN AIR BY SURFACE TECHNIQUES AND MEV ION-SCATTERING
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[J]. APPLIED PHYSICS LETTERS, 1981, 39 (11) : 915 - 917

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